Beating the standard quantum limit under ambient conditions with solid-state spins.


Journal

Science advances
ISSN: 2375-2548
Titre abrégé: Sci Adv
Pays: United States
ID NLM: 101653440

Informations de publication

Date de publication:
Aug 2021
Historique:
received: 04 02 2021
accepted: 21 06 2021
entrez: 7 8 2021
pubmed: 8 8 2021
medline: 8 8 2021
Statut: epublish

Résumé

The use of entangled sensors improves the precision limit from the standard quantum limit (SQL) to the Heisenberg limit. Most previous experiments beating the SQL are performed on the sensors that are well isolated under extreme conditions. Here, we demonstrate a sub-SQL interferometer at ambient conditions by using a multispin system, namely, the nitrogen-vacancy (NV) defect in diamond. We achieve two-spin interference with a phase sensitivity of 1.79 ± 0.06 dB beyond the SQL and three-spin interference with a phase sensitivity of 2.77 ± 0.10 dB. Besides, a magnetic sensitivity of 0.87 ± 0.09 dB beyond the SQL is achieved by two-spin interference for detecting a real magnetic field. Particularly, the deterministic and joint initialization of NV negative state, NV electron spin, and two nuclear spins is realized at room temperature. The techniques used here are of fundamental importance for quantum sensing and computing, and naturally applicable to other solid-state spin systems.

Identifiants

pubmed: 34362736
pii: 7/32/eabg9204
doi: 10.1126/sciadv.abg9204
pmc: PMC8346219
pii:
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Informations de copyright

Copyright © 2021 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).

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Auteurs

Tianyu Xie (T)

Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China.
CAS Key Laboratory of Microscale Magnetic Resonance and Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China.
Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China.

Zhiyuan Zhao (Z)

Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China.
CAS Key Laboratory of Microscale Magnetic Resonance and Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China.
Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China.

Xi Kong (X)

National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China.

Wenchao Ma (W)

Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China.
CAS Key Laboratory of Microscale Magnetic Resonance and Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China.
Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China.

Mengqi Wang (M)

Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China.
CAS Key Laboratory of Microscale Magnetic Resonance and Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China.
Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China.

Xiangyu Ye (X)

CAS Key Laboratory of Microscale Magnetic Resonance and Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China.

Pei Yu (P)

CAS Key Laboratory of Microscale Magnetic Resonance and Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China.

Zhiping Yang (Z)

CAS Key Laboratory of Microscale Magnetic Resonance and Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China.

Shaoyi Xu (S)

CAS Key Laboratory of Microscale Magnetic Resonance and Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China.

Pengfei Wang (P)

Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China.
CAS Key Laboratory of Microscale Magnetic Resonance and Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China.
Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China.

Ya Wang (Y)

CAS Key Laboratory of Microscale Magnetic Resonance and Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China.
Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China.

Fazhan Shi (F)

Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China. fzshi@ustc.edu.cn djf@ustc.edu.cn.
CAS Key Laboratory of Microscale Magnetic Resonance and Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China.
Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China.

Jiangfeng Du (J)

Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China. fzshi@ustc.edu.cn djf@ustc.edu.cn.
CAS Key Laboratory of Microscale Magnetic Resonance and Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China.
Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China.

Classifications MeSH