Monitoring Electrical Biasing of Pb(Zr
PZT
differential phase contrast
electrical biasing
ferroelectric
in situ TEM
thin film capacitor
Journal
Materials (Basel, Switzerland)
ISSN: 1996-1944
Titre abrégé: Materials (Basel)
Pays: Switzerland
ID NLM: 101555929
Informations de publication
Date de publication:
23 Aug 2021
23 Aug 2021
Historique:
received:
22
07
2021
revised:
18
08
2021
accepted:
19
08
2021
entrez:
27
8
2021
pubmed:
28
8
2021
medline:
28
8
2021
Statut:
epublish
Résumé
Increased data storage densities are required for the next generation of nonvolatile random access memories and data storage devices based on ferroelectric materials. Yet, with intensified miniaturization, these devices face a loss of their ferroelectric properties. Therefore, a full microscopic understanding of the impact of the nanoscale defects on the ferroelectric switching dynamics is crucial. However, collecting real-time data at the atomic and nanoscale remains very challenging. In this work, we explore the ferroelectric response of a Pb(Zr
Identifiants
pubmed: 34443272
pii: ma14164749
doi: 10.3390/ma14164749
pmc: PMC8400982
pii:
doi:
Types de publication
Journal Article
Langues
eng
Subventions
Organisme : Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung
ID : 175926
Organisme : Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung
ID : 200021-188414
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