Multimode Operation of Organic-Inorganic Hybrid Thin-Film Transistors Based on Solution-Processed Indium Oxide Films.
metal oxide semiconductor
organic−inorganic hybrid
solution process
thin-film transistors
threshold voltage control
Journal
ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991
Informations de publication
Date de publication:
15 Sep 2021
15 Sep 2021
Historique:
pubmed:
4
9
2021
medline:
4
9
2021
entrez:
3
9
2021
Statut:
ppublish
Résumé
Solution-processed metal oxide (MO) thin films have been extensively studied for use in thin-film transistors (TFTs) due to their high optical transparency, simplicity of fabrication methods, and high electron mobility. Here, we report, for the first time, the improvement of the electronic properties of solution-processed indium oxide (InO
Identifiants
pubmed: 34478260
doi: 10.1021/acsami.1c10982
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM