Mapping the nanoscale effects of charge traps on electrical transport in grain structures of indium tin oxide thin films.
Journal
Nanoscale advances
ISSN: 2516-0230
Titre abrégé: Nanoscale Adv
Pays: England
ID NLM: 101738708
Informations de publication
Date de publication:
25 Aug 2021
25 Aug 2021
Historique:
received:
07
03
2021
accepted:
14
07
2021
entrez:
6
9
2021
pubmed:
7
9
2021
medline:
7
9
2021
Statut:
epublish
Résumé
We report the mapping of the nanoscale effects of charge trap activities in the grain structures of an oxygen plasma-treated indium tin oxide (ITO) thin film. Here, a conducting Pt probe made direct contact with the surface of an ITO thin film and scanned the surface while measuring the maps of electrical currents and noises. The measured data were analyzed to obtain the maps of sheet conductance (
Identifiants
pubmed: 34485820
doi: 10.1039/d1na00175b
pii: d1na00175b
pmc: PMC8386405
doi:
Types de publication
Journal Article
Langues
eng
Pagination
5008-5015Informations de copyright
This journal is © The Royal Society of Chemistry.
Déclaration de conflit d'intérêts
There are no conflicts of interest to declare.
Références
Phys Rev Lett. 1986 May 12;56(19):2100-2103
pubmed: 10032857
Nanoscale. 2016 Jan 14;8(2):835-42
pubmed: 26530520
Acc Chem Res. 2009 Nov 17;42(11):1748-57
pubmed: 19728725
Sci Rep. 2018 Oct 25;8(1):15822
pubmed: 30361562
ACS Nano. 2020 Sep 22;14(9):11542-11547
pubmed: 32833445
Phys Chem Chem Phys. 2018 May 23;20(20):13962-13973
pubmed: 29744486
Sci Rep. 2020 Aug 13;10(1):13699
pubmed: 32792596
ACS Nano. 2016 Nov 22;10(11):10135-10142
pubmed: 27934081