Spatially Graded Millimeter Sized Mo

band gap engineering chemical vapor deposition compositionally graded Mo1−xWxS2 monolayer alloy memory effect sulfur vacancies

Journal

ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991

Informations de publication

Date de publication:
22 Sep 2021
Historique:
pubmed: 9 9 2021
medline: 9 9 2021
entrez: 8 9 2021
Statut: ppublish

Résumé

The band gap engineering of two-dimensional (2D) transition metal dichacogenides (TMDs) could significantly broaden their applications, especially in electronics and optoelectronics. Alloying is a more effective approach to synthesize 2D ternary TMD materials with tunable bandgaps by regulating the compositions. Whether the alloying could induce memory effects is of interest as a scientific problem and worthy to be studied. A thermal evaporation-assisted chemical vapor deposition (CVD) method was proposed to grow millimeter size gradient alloyed monolayer Mo

Identifiants

DOI: 10.1021/acsami.1c09176 PMID: 34494432
pubmed: 34494432
doi: 10.1021/acsami.1c09176
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

44693-44702

Auteurs

Hao Yu (H)

Tianjin Key Laboratory of Photoelectric Materials and Devices, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, P. R. China.

Hui Yan (H)

Tianjin Key Laboratory of Photoelectric Materials and Devices, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, P. R. China.
Key Laboratory of Display Materials and Photoelectric Devices, National Demonstration Center for Experimental Function Materials Education, Tianjin University of Technology, Ministry of Education, Tianjin 300384, P. R. China.
ORCID: 0000-0001-7902-458X

Heng Li (H)

Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, P. R. China.
Jiujiang Research Institute of Xiamen University, Jiujiang 332000, P. R. China.

Zhuocheng Li (Z)

Tianjin Key Laboratory of Photoelectric Materials and Devices, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, P. R. China.

Yanliu Bai (Y)

Tianjin Key Laboratory of Photoelectric Materials and Devices, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, P. R. China.

Hao Zhu (H)

Tianjin Key Laboratory of Photoelectric Materials and Devices, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, P. R. China.

Shougen Yin (S)

Tianjin Key Laboratory of Photoelectric Materials and Devices, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, P. R. China.
Key Laboratory of Display Materials and Photoelectric Devices, National Demonstration Center for Experimental Function Materials Education, Tianjin University of Technology, Ministry of Education, Tianjin 300384, P. R. China.

Classifications MeSH