Tensile creep behavior and mechanism of CoCrFeMnNi high entropy alloy.

Creep Dislocation Elemental segregation High entropy alloy Microstructure

Journal

Micron (Oxford, England : 1993)
ISSN: 1878-4291
Titre abrégé: Micron
Pays: England
ID NLM: 9312850

Informations de publication

Date de publication:
Nov 2021
Historique:
received: 03 06 2021
revised: 02 08 2021
accepted: 04 09 2021
pubmed: 18 9 2021
medline: 18 9 2021
entrez: 17 9 2021
Statut: ppublish

Résumé

As a potential novel superalloy, the study on the creep of high entropy alloys is of great significance. Equiatomic ratio CoCrFeMnNi with a mass of 6.7 kg was fabricated by vacuum induction levitation melting. Dendrite structure is obtained for as-cast alloy while a homogeneous equiaxed grain structure can be formed after annealing at 1273 K for 6 h. The tensile creep behavior of as-annealed alloy at 773-973 K and 50-340 MPa is systematically studied. Apparent dynamic recovery and recrystallization occur for creep at 973 K while high dislocation density can be observed for creep at 923 K and lower temperatures. Results of EDS analyses on fractured surface, stress exponent and activation energy for steady state creep rate suggest that the creep mechanism should be the dislocation viscous glide dragged by solute Mn at low stresses and low temperatures and be the dislocation climb associated with Mn diffusion at high stresses and high temperatures.

Identifiants

pubmed: 34534922
pii: S0968-4328(21)00135-9
doi: 10.1016/j.micron.2021.103144
pii:
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

103144

Informations de copyright

Copyright © 2021. Published by Elsevier Ltd.

Auteurs

Caihong Song (C)

Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China.

Guojun Li (G)

Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China.

Gen Li (G)

Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China.

Guopeng Zhang (G)

Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China.

Bin Cai (B)

Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China. Electronic address: bcai@zzu.edu.cn.

Classifications MeSH