Transverse barrier formation by electrical triggering of a metal-to-insulator transition.


Journal

Nature communications
ISSN: 2041-1723
Titre abrégé: Nat Commun
Pays: England
ID NLM: 101528555

Informations de publication

Date de publication:
17 Sep 2021
Historique:
received: 16 10 2020
accepted: 19 08 2021
entrez: 18 9 2021
pubmed: 19 9 2021
medline: 19 9 2021
Statut: epublish

Résumé

Application of an electric stimulus to a material with a metal-insulator transition can trigger a large resistance change. Resistive switching from an insulating into a metallic phase, which typically occurs by the formation of a conducting filament parallel to the current flow, is a highly active research topic. Using the magneto-optical Kerr imaging, we found that the opposite type of resistive switching, from a metal into an insulator, occurs in a reciprocal characteristic spatial pattern: the formation of an insulating barrier perpendicular to the driving current. This barrier formation leads to an unusual N-type negative differential resistance in the current-voltage characteristics. We further demonstrate that electrically inducing a transverse barrier enables a unique approach to voltage-controlled magnetism. By triggering the metal-to-insulator resistive switching in a magnetic material, local on/off control of ferromagnetism is achieved using a global voltage bias applied to the whole device.

Identifiants

pubmed: 34535660
doi: 10.1038/s41467-021-25802-1
pii: 10.1038/s41467-021-25802-1
pmc: PMC8448889
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

5499

Subventions

Organisme : U.S. Department of Energy (DOE)
ID : DE-SC0019273

Informations de copyright

© 2021. The Author(s).

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Auteurs

Pavel Salev (P)

Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, CA, USA. psalev@ucsd.edu.

Lorenzo Fratino (L)

Université Paris-Saclay, CNRS Laboratoire de Physique des Solides, 91405, Orsay, France.

Dayne Sasaki (D)

Department of Materials Science and Engineering, University of California Davis, Davis, CA, USA.

Rani Berkoun (R)

Université Paris-Saclay, CNRS Laboratoire de Physique des Solides, 91405, Orsay, France.

Javier Del Valle (J)

Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, CA, USA.
Department of Quantum Matter Physics, University of Geneva, Geneva, Switzerland.

Yoav Kalcheim (Y)

Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, CA, USA.
Department of Materials Science and Engineering, Technion-Israel Institute of Technology, Haifa, Israel.

Yayoi Takamura (Y)

Department of Materials Science and Engineering, University of California Davis, Davis, CA, USA.

Marcelo Rozenberg (M)

Université Paris-Saclay, CNRS Laboratoire de Physique des Solides, 91405, Orsay, France.

Ivan K Schuller (IK)

Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, CA, USA.

Classifications MeSH