Defect Engineering of Out-of-Plane Charge Transport in van der Waals Heterostructures for Bi-Direction Photoresponse.
2D Heterostructure
TMDs
graphene
interlayer charge transport
photoresponse
Journal
ACS nano
ISSN: 1936-086X
Titre abrégé: ACS Nano
Pays: United States
ID NLM: 101313589
Informations de publication
Date de publication:
26 Oct 2021
26 Oct 2021
Historique:
pubmed:
23
9
2021
medline:
23
9
2021
entrez:
22
9
2021
Statut:
ppublish
Résumé
Defects are ubiquitous in two-dimensional (2D) transition-metal dichalcogenides (TMDs), generated by the initial growth- or the postprocessing. However, the defects may play negative roles in the photoelectronic properties of TMDs due to the reduction of in-plane transport of carriers. In this work, we demonstrate that the
Identifiants
pubmed: 34550681
doi: 10.1021/acsnano.1c06238
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM