Room-Temperature Ferroelectricity in 2D Metal-Tellurium-Oxyhalide Cd

2D material Cd7Te7Cl8O17 flakes chemical vapor deposition room-temperature ferroelectricity second-harmonic generation

Journal

ACS nano
ISSN: 1936-086X
Titre abrégé: ACS Nano
Pays: United States
ID NLM: 101313589

Informations de publication

Date de publication:
26 Oct 2021
Historique:
pubmed: 25 9 2021
medline: 25 9 2021
entrez: 24 9 2021
Statut: ppublish

Résumé

Two-dimensional (2D) ferroelectric materials have attracted increasing interest due to meeting the requirements of integration, miniaturization, and multifunction of devices. However, the exploration of intrinsic 2D ferroelectric materials is still in the early stage, for which the related reports are still limited, especially fewer ones prepared by chemical vapor deposition (CVD). Here, the ultrathin metal-tellurium-oxyhalide Cd

Identifiants

DOI: 10.1021/acsnano.1c06099 PMID: 34559511
pubmed: 34559511
doi: 10.1021/acsnano.1c06099
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

16525-16532

Auteurs

Qiaojun Peng (Q)

State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Sciences and Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.

Dongyan Li (D)

State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Sciences and Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.

Pu Huang (P)

Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China.
ORCID: 0000-0003-0738-3908

Yangyang Ren (Y)

School of Physics, Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.

Zexin Li (Z)

State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Sciences and Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.

Lejing Pi (L)

State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Sciences and Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.

Ping Chen (P)

State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Sciences and Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.

Menghao Wu (M)

School of Physics, Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.

Xiuwen Zhang (X)

Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China.
ORCID: 0000-0003-1003-2885

Xing Zhou (X)

State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Sciences and Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
ORCID: 0000-0001-9031-0130

Tianyou Zhai (T)

State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Sciences and Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
ORCID: 0000-0003-0985-4806

Classifications MeSH