Recent progress in silk fibroin-based flexible electronics.

Electrical and electronic engineering Electronic properties and materials

Journal

Microsystems & nanoengineering
ISSN: 2055-7434
Titre abrégé: Microsyst Nanoeng
Pays: England
ID NLM: 101695458

Informations de publication

Date de publication:
2021
Historique:
received: 25 12 2020
accepted: 16 02 2021
entrez: 27 9 2021
pubmed: 28 9 2021
medline: 28 9 2021
Statut: epublish

Résumé

With the rapid development of the Internet of Things (IoT) and the emergence of 5G, traditional silicon-based electronics no longer fully meet market demands such as nonplanar application scenarios due to mechanical mismatch. This provides unprecedented opportunities for flexible electronics that bypass the physical rigidity through the introduction of flexible materials. In recent decades, biological materials with outstanding biocompatibility and biodegradability, which are considered some of the most promising candidates for next-generation flexible electronics, have received increasing attention, e.g., silk fibroin, cellulose, pectin, chitosan, and melanin. Among them, silk fibroin presents greater superiorities in biocompatibility and biodegradability, and moreover, it also possesses a variety of attractive properties, such as adjustable water solubility, remarkable optical transmittance, high mechanical robustness, light weight, and ease of processing, which are partially or even completely lacking in other biological materials. Therefore, silk fibroin has been widely used as fundamental components for the construction of biocompatible flexible electronics, particularly for wearable and implantable devices. Furthermore, in recent years, more attention has been paid to the investigation of the functional characteristics of silk fibroin, such as the dielectric properties, piezoelectric properties, strong ability to lose electrons, and sensitivity to environmental variables. Here, this paper not only reviews the preparation technologies for various forms of silk fibroin and the recent progress in the use of silk fibroin as a fundamental material but also focuses on the recent advanced works in which silk fibroin serves as functional components. Additionally, the challenges and future development of silk fibroin-based flexible electronics are summarized. (1) This review focuses on silk fibroin serving as active functional components to construct flexible electronics. (2) Recent representative reports on flexible electronic devices that applied silk fibroin as fundamental supporting components are summarized. (3) This review summarizes the current typical silk fibroin-based materials and the corresponding advanced preparation technologies. (4) The current challenges and future development of silk fibroin-based flexible electronic devices are analyzed.

Identifiants

pubmed: 34567749
doi: 10.1038/s41378-021-00261-2
pii: 261
pmc: PMC8433308
doi:

Types de publication

Journal Article Review

Langues

eng

Pagination

35

Informations de copyright

© The Author(s) 2021.

Déclaration de conflit d'intérêts

Conflict of interestThe authors declare no competing interests.

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Auteurs

Dan-Liang Wen (DL)

School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731 China.

De-Heng Sun (DH)

School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731 China.

Peng Huang (P)

School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731 China.

Wen Huang (W)

School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731 China.

Meng Su (M)

CIRMM, Institute of Industrial Science, The University of Tokyo, Tokyo, 153-8505 Japan.

Ya Wang (Y)

Microsystems Laboratory, École Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland.

Meng-Di Han (MD)

Institute of Microelectronics, Peking University, 100087 Beijing, China.

Beomjoon Kim (B)

CIRMM, Institute of Industrial Science, The University of Tokyo, Tokyo, 153-8505 Japan.

Juergen Brugger (J)

Microsystems Laboratory, École Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland.

Hai-Xia Zhang (HX)

Institute of Microelectronics, Peking University, 100087 Beijing, China.

Xiao-Sheng Zhang (XS)

School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731 China.

Classifications MeSH