Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD.
InGaN
hole
interstitial Mg
Journal
Materials (Basel, Switzerland)
ISSN: 1996-1944
Titre abrégé: Materials (Basel)
Pays: Switzerland
ID NLM: 101555929
Informations de publication
Date de publication:
16 Sep 2021
16 Sep 2021
Historique:
received:
31
08
2021
revised:
10
09
2021
accepted:
13
09
2021
entrez:
28
9
2021
pubmed:
29
9
2021
medline:
29
9
2021
Statut:
epublish
Résumé
This work studied the regulation of hole concentration and mobility in p-InGaN layers grown by metalorganic chemical vapor deposition (MOCVD) under an N-rich environment. By adjusting the growth temperature, the hole concentration can be controlled between 6 × 10
Identifiants
pubmed: 34576563
pii: ma14185339
doi: 10.3390/ma14185339
pmc: PMC8467921
pii:
doi:
Types de publication
Journal Article
Langues
eng
Subventions
Organisme : Science Challenge Project
ID : TZ2018003
Organisme : Science Challenge Project
ID : TZ2016003
Organisme : National key R&D program of China
ID : No.2017YFB0402900
Organisme : National Natural Science Foundation of China
ID : No. 61674143
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