Possible Routes to Obtain Enhanced Magnetoresistance in a Driven Quantum Heterostructure with a Quasi-Periodic Spacer.

Floquet–Bloch ansatz Green’s function formalism light irradiation magnetoresistance quantum heterostructure quasi-periodic spacer tight binding framework

Journal

Micromachines
ISSN: 2072-666X
Titre abrégé: Micromachines (Basel)
Pays: Switzerland
ID NLM: 101640903

Informations de publication

Date de publication:
27 Aug 2021
Historique:
received: 09 08 2021
revised: 23 08 2021
accepted: 24 08 2021
entrez: 28 9 2021
pubmed: 29 9 2021
medline: 29 9 2021
Statut: epublish

Résumé

In this work, we perform a numerical study of magnetoresistance in a one-dimensional quantum heterostructure, where the change in electrical resistance is measured between parallel and antiparallel configurations of magnetic layers. This layered structure also incorporates a non-magnetic spacer, subjected to quasi-periodic potentials, which is centrally clamped between two ferromagnetic layers. The efficiency of the magnetoresistance is further tuned by injecting unpolarized light on top of the two sided magnetic layers. Modulating the characteristic properties of different layers, the value of magnetoresistance can be enhanced significantly. The site energies of the spacer is modified through the well-known Aubry-André and Harper (AAH) potential, and the hopping parameter of magnetic layers is renormalized due to light irradiation. We describe the Hamiltonian of the layered structure within a tight-binding (TB) framework and investigate the transport properties through this nanojunction following Green's function formalism. The Floquet-Bloch (FB) anstaz within the minimal coupling scheme is introduced to incorporate the effect of light irradiation in TB Hamiltonian. Several interesting features of magnetotransport properties are represented considering the interplay between cosine modulated site energies of the central region and the hopping integral of the magnetic regions that are subjected to light irradiation. Finally, the effect of temperature on magnetoresistance is also investigated to make the model more realistic and suitable for device designing. Our analysis is purely a numerical one, and it leads to some fundamental prescriptions of obtaining enhanced magnetoresistance in multilayered systems.

Identifiants

pubmed: 34577665
pii: mi12091021
doi: 10.3390/mi12091021
pmc: PMC8466401
pii:
doi:

Types de publication

Journal Article

Langues

eng

Subventions

Organisme : Centers of Excellence with BASAL/ANID financing Grant AFB180001
ID : CEDENNA
Organisme : Science and Engineering Research Board
ID : EMR/2017/000504
Organisme : El Patrimonio Aut\'{o}nomo Fondo Nacional de Financiamiento para la Ciencia
ID : CD 111580863338
Organisme : la Tecnolog\'{i}a y la Innovaci\'{o}n Francisco Jos\'{e} de Caldas
ID : CT FP80740-173-2019

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Auteurs

Arpita Koley (A)

Physics and Applied Mathematics Unit, Indian Statistical Institute, 203 Barrackpore Trunk Road, Kolkata 700 108, India.

Santanu K Maiti (SK)

Physics and Applied Mathematics Unit, Indian Statistical Institute, 203 Barrackpore Trunk Road, Kolkata 700 108, India.

Laura M Pérez (LM)

Instituto de Alta Investigación, Universidad de Tarapacá, Casilla 7D, Arica 1000000, Chile.

Judith Helena Ojeda Silva (JHO)

Grupo de Física de Materiales, Universidad Pedagógica y Tecnológica de Colombia, Tunja 150003, Colombia.
Laboratorio de Química Teórica y Computacional, Grupo de Investigación Química-Física Molecular y Modelamiento Computacional (QUIMOL), Facultad de Ciencias, Universidad Pedagógica y Tecnológica de Colombia, Tunja 150003, Colombia.

David Laroze (D)

Instituto de Alta Investigación, Universidad de Tarapacá, Casilla 7D, Arica 1000000, Chile.

Classifications MeSH