Understanding Grain Boundary Electrical Resistivity in Cu: The Effect of Boundary Structure.

copper electrical resistivity excess volume grain boundaries grain boundary structure

Journal

ACS nano
ISSN: 1936-086X
Titre abrégé: ACS Nano
Pays: United States
ID NLM: 101313589

Informations de publication

Date de publication:
26 Oct 2021
Historique:
pubmed: 5 10 2021
medline: 5 10 2021
entrez: 4 10 2021
Statut: ppublish

Résumé

Grain boundaries (GBs) in metals usually increase electrical resistivity due to their distinct atomic arrangement compared to the grain interior. While the GB structure has a crucial influence on the electrical properties, its relationship with resistivity is poorly understood. Here, we perform a systematic study on the resistivity-structure relationship in Cu tilt GBs, employing high-resolution

Identifiants

pubmed: 34605639
doi: 10.1021/acsnano.1c06367
pmc: PMC8552493
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

16607-16615

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Auteurs

Hanna Bishara (H)

Max-Planck-Institut für Eisenforschung GmbH, 40237 Düsseldorf, Germany.

Subin Lee (S)

Max-Planck-Institut für Eisenforschung GmbH, 40237 Düsseldorf, Germany.
Institute for Applied Materials (IAM), Karlsruhe Institute of Technology, 76344 Eggenstein-Leopoldshafen, Germany.

Tobias Brink (T)

Max-Planck-Institut für Eisenforschung GmbH, 40237 Düsseldorf, Germany.

Matteo Ghidelli (M)

Max-Planck-Institut für Eisenforschung GmbH, 40237 Düsseldorf, Germany.
Laboratoire des Sciences des Procédés et des Matériaux (LSPM), CNRS, Université Sorbonne Paris Nord, 93430 Villetaneuse, France.

Gerhard Dehm (G)

Max-Planck-Institut für Eisenforschung GmbH, 40237 Düsseldorf, Germany.

Classifications MeSH