Ultrathin epitaxial Bi film growth on 2D HfTe
2D heterostructures
ARPES
Bi
Xenes
ambient air stability
bismuthene
epitaxy
Journal
Nanotechnology
ISSN: 1361-6528
Titre abrégé: Nanotechnology
Pays: England
ID NLM: 101241272
Informations de publication
Date de publication:
20 Oct 2021
20 Oct 2021
Historique:
received:
12
07
2021
accepted:
05
10
2021
pubmed:
6
10
2021
medline:
6
10
2021
entrez:
5
10
2021
Statut:
epublish
Résumé
Among ultrathin monoelemental two-dimensional (2D) materials, bismuthene, the single layer of heavier group-VΑ element bismuth (Bi), has been predicted to have large non trivial gap. Here, we demonstrate the growth of Bi films by molecular beam epitaxy on 2D-HfTe
Identifiants
pubmed: 34610589
doi: 10.1088/1361-6528/ac2d08
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Informations de copyright
© 2021 IOP Publishing Ltd.