Chemistry and Charge Trapping at the Interface of Silver and Ultrathin Layers of Zinc Oxide.
Ag−ZnO
atomic layer deposition
interface defect states
surface photovoltage
thin films
Journal
ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991
Informations de publication
Date de publication:
20 Oct 2021
20 Oct 2021
Historique:
pubmed:
12
10
2021
medline:
12
10
2021
entrez:
11
10
2021
Statut:
ppublish
Résumé
Zinc oxide, a wide-band-gap semiconductor, shows intriguing optoelectronic properties when coupled with Ag. Specifically, an absorbance band in the visible range that is not apparent in the separated materials emerges when the interface is formed. Interestingly, photoexcitation of this "interface band" or band-to-band results in a counterintuitive photovoltaic response when a supra/sub-band-gap light is shone. To investigate the origin of this absorbance band and photovoltaic response, we studied in detail the energy-band alignment of ultrathin layers of ZnO (3-60 nm) with Ag. Our analysis indicated that an 'electrostatic potential cliff' is formed within the first 1-2 nm of ZnO. In addition, oxygen vacancies, presumably generated by Ag
Identifiants
pubmed: 34628851
doi: 10.1021/acsami.1c11566
pmc: PMC8592502
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
49423-49432Références
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