Dry-Etching Processes for High-Aspect-Ratio Features with Sub-10 nm Resolution High-χ Block Copolymers.

Directed self-assembly of block copolymers (BCP) is a very attractive technique for the realization of functional nanostructures at high resolution. In this work, we developed full dry-etching strategies for BCP nanolithography using an 18 nm pitch lamellar silicon-containing block copolymer. Both an oxidizing Ar/O