Monolithic Integration of Nano-Ridge Engineered InGaP/GaAs HBTs on 300 mm Si Substrate.

Nano-ridge engineering (NRE) is a novel method to monolithically integrate III-V devices on a 300 mm Si platform. In this work, NRE is applied to InGaP/GaAs heterojunction bipolar transistors (HBTs), enabling hybrid III-V/CMOS technology for RF applications. The NRE HBT stacks were grown by metal-organic vapor-phase epitaxy on 300 mm Si (001) wafers with a double trench-patterned oxide template, in an industrial deposition chamber. Aspect ratio trapping in the narrow bottom part of a trench results in a threading dislocation density below 10