Low defect and high electrical conductivity of graphene through plasma graphene healing treatment monitored with in situ optical emission spectroscopy.


Journal

Scientific reports
ISSN: 2045-2322
Titre abrégé: Sci Rep
Pays: England
ID NLM: 101563288

Informations de publication

Date de publication:
13 Oct 2021
Historique:
received: 15 05 2021
accepted: 21 09 2021
entrez: 14 10 2021
pubmed: 15 10 2021
medline: 15 10 2021
Statut: epublish

Résumé

Fundamental studies on graphene (Gr) and its real device applications have been affected by unavoidable defects and impurities which are usually present in synthesized Gr. Therefore, post treatment methods on Gr have been an important subject of research followed by the community. Here, we demonstrate a post-treatment of cm-sized CVD-grown graphene in a Radio Frequency-generated low-pressure plasma of methane and hydrogen to remove oxygen functional groups and heal the structural defects. The optimum plasma treatment parameters, such as pressure, plasma power, and the ratio of the gases, are optimized using in-situ optical emission spectroscopy. This way we present an optimal healing condition monitored with in situ OES. A twofold increase in the conductivity of plasma-treated Gr samples was obtained. Plasma treatment conditions give insights into the possible underlying mechanisms, and the method presents an effective way to obtain improved Gr quality.

Identifiants

pubmed: 34645871
doi: 10.1038/s41598-021-99421-7
pii: 10.1038/s41598-021-99421-7
pmc: PMC8514466
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

20334

Subventions

Organisme : Iran National Science Foundation
ID : 99002503

Informations de copyright

© 2021. The Author(s).

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Auteurs

Mohammad Salehi (M)

Laser and Plasma Research Institute, Shahid Beheshti University, 19839, Tehran, Iran.

Parnia Bastani (P)

Department of Physics, Shahid Beheshti University, 19839, Tehran, Iran.

Loghman Jamilpanah (L)

Department of Physics, Shahid Beheshti University, 19839, Tehran, Iran.

Abbas Madani (A)

AMO GmbH (Advanced Microelectronic Center), Aachen, Germany.
Department of Engineering, The University of Cambridge, Cambridge, UK.

Seyed Majid Mohseni (SM)

Department of Physics, Shahid Beheshti University, 19839, Tehran, Iran. m-mohseni@sbu.ac.ir.

Babak Shokri (B)

Laser and Plasma Research Institute, Shahid Beheshti University, 19839, Tehran, Iran. b-shokri@sbu.ac.ir.
Department of Physics, Shahid Beheshti University, 19839, Tehran, Iran. b-shokri@sbu.ac.ir.

Classifications MeSH