Topological domain states and magnetoelectric properties in multiferroic nanostructures.

ferroelectric domains magnetoelectric coupling multiferroic nanostructures topological defects

Journal

National science review
ISSN: 2053-714X
Titre abrégé: Natl Sci Rev
Pays: China
ID NLM: 101633095

Informations de publication

Date de publication:
Jul 2019
Historique:
received: 06 05 2019
revised: 07 07 2019
accepted: 12 07 2019
entrez: 25 10 2021
pubmed: 1 7 2019
medline: 1 7 2019
Statut: ppublish

Résumé

Multiferroic nanostructures have been attracting tremendous attention over the past decade, due to their rich cross-coupling effects and prospective electronic applications. In particular, the emergence of some exotic phenomena in size-confined multiferroic systems, including topological domain states such as vortices, center domains, and skyrmion bubble domains, has opened a new avenue to a number of intriguing physical properties and functionalities, and thus underpins a wide range of applications in future nanoelectronic devices. It is also highly appreciated that nano-domain engineering provides a pathway to control the magnetoelectric properties, which is promising for future energy-efficient spintronic devices. In recent years, this field, still in its infancy, has witnessed a rapid development and a number of challenges too. In this article, we shall review the recent advances in the emergent domain-related exotic phenomena in multiferroic nanostructures. Specific attention is paid to the topological domain structures and related novel physical behaviors as well as the electric-field-driven magnetic switching via domain engineering. This review will end with a discussion of future challenges and potential directions.

Identifiants

pubmed: 34691923
doi: 10.1093/nsr/nwz100
pii: nwz100
pmc: PMC8291546
doi:

Types de publication

Journal Article

Langues

eng

Pagination

684-702

Informations de copyright

© The Author(s) 2018. Published by Oxford University Press on behalf of China Science Publishing & Media Ltd.

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Auteurs

Guo Tian (G)

Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.

Wenda Yang (W)

Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.

Deyang Chen (D)

Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.

Zhen Fan (Z)

Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.

Zhipeng Hou (Z)

Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.

Marin Alexe (M)

Department of Physics, University of Warwick, Coventry CV4 7AL, UK.

Xingsen Gao (X)

Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.

Classifications MeSH