Carbon Nanotubes for Radiation-Tolerant Electronics.

SRAM carbon nanotube field-effect transistor radiation-tolerant total ionizing dose transient upset

Journal

ACS nano
ISSN: 1936-086X
Titre abrégé: ACS Nano
Pays: United States
ID NLM: 101313589

Informations de publication

Date de publication:
23 Nov 2021
Historique:
pubmed: 28 10 2021
medline: 28 10 2021
entrez: 27 10 2021
Statut: ppublish

Résumé

Electronics for space applications have stringent requirements on both performance and radiation tolerance. The constant exposure to cosmic radiation damages and eventually destroys electronics, limiting the lifespan of all space-bound missions. Thus, as space missions grow increasingly ambitious in distance away from Earth, and therefore time in space, the electronics driving them must likewise grow increasingly radiation-tolerant. In this work, we show how carbon nanotube (CNT) field-effect transistors (CNFETs), a leading candidate for energy-efficient electronics, can be strategically engineered to simultaneously realize a robust radiation-tolerant technology. We demonstrate radiation-tolerant CNFETs by leveraging both

Identifiants

pubmed: 34704446
doi: 10.1021/acsnano.1c04194
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

17310-17318

Auteurs

Pritpal S Kanhaiya (PS)

Department of Electrical Engineering and Computer Science. Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States.

Andrew Yu (A)

Department of Electrical Engineering and Computer Science. Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States.

Richard Netzer (R)

United States Air Force Research Laboratories, Space Vehicles Directorate, Albuquerque, New Mexico 87123, United States.

William Kemp (W)

United States Air Force Research Laboratories, Space Vehicles Directorate, Albuquerque, New Mexico 87123, United States.

Derek Doyle (D)

United States Air Force Research Laboratories, Space Vehicles Directorate, Albuquerque, New Mexico 87123, United States.

Max M Shulaker (MM)

Department of Electrical Engineering and Computer Science. Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States.

Classifications MeSH