Carbon Nanotubes for Radiation-Tolerant Electronics.
SRAM
carbon nanotube
field-effect transistor
radiation-tolerant
total ionizing dose
transient upset
Journal
ACS nano
ISSN: 1936-086X
Titre abrégé: ACS Nano
Pays: United States
ID NLM: 101313589
Informations de publication
Date de publication:
23 Nov 2021
23 Nov 2021
Historique:
pubmed:
28
10
2021
medline:
28
10
2021
entrez:
27
10
2021
Statut:
ppublish
Résumé
Electronics for space applications have stringent requirements on both performance and radiation tolerance. The constant exposure to cosmic radiation damages and eventually destroys electronics, limiting the lifespan of all space-bound missions. Thus, as space missions grow increasingly ambitious in distance away from Earth, and therefore time in space, the electronics driving them must likewise grow increasingly radiation-tolerant. In this work, we show how carbon nanotube (CNT) field-effect transistors (CNFETs), a leading candidate for energy-efficient electronics, can be strategically engineered to simultaneously realize a robust radiation-tolerant technology. We demonstrate radiation-tolerant CNFETs by leveraging both
Identifiants
pubmed: 34704446
doi: 10.1021/acsnano.1c04194
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM