Anisotropic Thermal Conductivity of Crystalline Layered SnSe

Phonon transport Raman thermometry SnSe2 frequency-domain thermoreflectance mean free path thermal conductivity anisotropy

Journal

Nano letters
ISSN: 1530-6992
Titre abrégé: Nano Lett
Pays: United States
ID NLM: 101088070

Informations de publication

Date de publication:
10 Nov 2021
Historique:
pubmed: 29 10 2021
medline: 29 10 2021
entrez: 28 10 2021
Statut: ppublish

Résumé

The degree of thermal anisotropy affects critically key device-relevant properties of layered two-dimensional materials. Here, we systematically study the in-plane and cross-plane thermal conductivity of crystalline SnSe

Identifiants

pubmed: 34710326
doi: 10.1021/acs.nanolett.1c03018
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

9172-9179

Auteurs

Peng Xiao (P)

Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona, Spain.
Departamento de Física, Universidad Autónoma de Barcelona, Bellaterra, 08193 Barcelona, Spain.

Emigdio Chavez-Angel (E)

Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona, Spain.

Stefanos Chaitoglou (S)

National Center for Scientific Research "Demokritos", 15310 Athens, Greece.

Marianna Sledzinska (M)

Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona, Spain.

Athanasios Dimoulas (A)

National Center for Scientific Research "Demokritos", 15310 Athens, Greece.

Clivia M Sotomayor Torres (CM)

Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona, Spain.
ICREA, Passeig Lluis Companys 23, 08010 Barcelona, Spain.

Alexandros El Sachat (A)

Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona, Spain.

Classifications MeSH