Charged Ferroelectric Domain Walls for Deterministic ac Signal Control at the Nanoscale.

Ferroelectric alternating current domain walls improper ferroelectricity nanoelectronics

Journal

Nano letters
ISSN: 1530-6992
Titre abrégé: Nano Lett
Pays: United States
ID NLM: 101088070

Informations de publication

Date de publication:
24 11 2021
Historique:
pubmed: 5 11 2021
medline: 11 3 2022
entrez: 4 11 2021
Statut: ppublish

Résumé

The direct current (dc) conductivity and emergent functionalities at ferroelectric domain walls are closely linked to the local polarization charges. Depending on the charge state, the walls can exhibit unusual dc conduction ranging from insulating to metallic-like, which is leveraged in domain-wall-based memory, multilevel data storage, and synaptic devices. In contrast to the functional dc behaviors at charged walls, their response to alternating currents (ac) remains to be resolved. Here, we reveal ac characteristics at positively and negatively charged walls in ErMnO

Identifiants

pubmed: 34734722
doi: 10.1021/acs.nanolett.1c03182
pmc: PMC8631726
doi:

Types de publication

Journal Article Research Support, Non-U.S. Gov't Research Support, U.S. Gov't, Non-P.H.S.

Langues

eng

Sous-ensembles de citation

IM

Pagination

9560-9566

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Auteurs

Jan Schultheiß (J)

Department of Materials Science and Engineering, Norwegian University of Science and Technology (NTNU), 7034, Trondheim, Norway.

Erik Lysne (E)

Department of Materials Science and Engineering, Norwegian University of Science and Technology (NTNU), 7034, Trondheim, Norway.

Lukas Puntigam (L)

Experimental Physics V, University of Augsburg, 86159, Augsburg, Germany.

Jakob Schaab (J)

Department of Materials, ETH Zurich, 8093, Zurich, Switzerland.

Edith Bourret (E)

Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.

Zewu Yan (Z)

Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.
Department of Physics, ETH Zurich, 8093, Zurich, Switzerland.

Stephan Krohns (S)

Experimental Physics V, University of Augsburg, 86159, Augsburg, Germany.

Dennis Meier (D)

Department of Materials Science and Engineering, Norwegian University of Science and Technology (NTNU), 7034, Trondheim, Norway.

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