Substrate Modification during Chemical Vapor Deposition of hBN on Sapphire.
2D material
III−V nitrides
RHEED
chemical vapor deposition
dielectric breakdown
hexagonal boron nitride
surface reconstruction
Journal
ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991
Informations de publication
Date de publication:
17 Nov 2021
17 Nov 2021
Historique:
pubmed:
9
11
2021
medline:
9
11
2021
entrez:
8
11
2021
Statut:
ppublish
Résumé
A comparison of hexagonal boron nitride (hBN) layers grown by chemical vapor deposition on
Identifiants
pubmed: 34748305
doi: 10.1021/acsami.1c14591
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM