In-Situ Transmission Electron Microscopy Observation of Germanium Growth on Freestanding Graphene: Unfolding Mechanism of 3D Crystal Growth During Van der Waals Epitaxy.
Ostwald ripening
Van der Waals epitaxy
graphene
in situ TEM
vertical diffusion
Journal
Small (Weinheim an der Bergstrasse, Germany)
ISSN: 1613-6829
Titre abrégé: Small
Pays: Germany
ID NLM: 101235338
Informations de publication
Date de publication:
Feb 2022
Feb 2022
Historique:
revised:
31
07
2021
received:
30
03
2021
pubmed:
12
11
2021
medline:
12
11
2021
entrez:
11
11
2021
Statut:
ppublish
Résumé
Breakthroughs in cutting-edge research fields such as hetero-integration of materials and the development of quantum devices are heavily bound to the control of misfit strain during heteroepitaxy. While remote epitaxy offers one of the most intriguing avenues, demonstrations of functional hybrid heterostructures are hardly possible without a deep understanding of the nucleation and growth kinetics of 3D crystals on graphene and their mutual interactions. Here, the kinetics of such processes from real-time observations of germanium (Ge) growth on freestanding single layer graphene (SLG) using in-situ transmission electron microscopy are unraveled. This powerful technique provides a unique opportunity to observe new and yet unexplored phenomena, which are not accessible to the standard ex situ characterizations. Through direct observations, remote interactions are elucidated between Ge crystals through the graphene layer in double heterostructures of Ge/graphene/Ge. Notably, the data show real-time evidence of vertical Ge atoms diffusion through the graphene layer. This phenomenon is attributed to the remote interactions of Ge atoms through the graphene lattice, due to its interatomic interaction transparency. Additionally, key mechanisms governing nucleation and initial growth in graphene were systematically determined. These findings enlighten the growth mechanism of graphene and provide a new pathway for disruptive hybrid semiconductor-graphene devices.
Identifiants
pubmed: 34761502
doi: 10.1002/smll.202101890
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
e2101890Informations de copyright
© 2021 Wiley-VCH GmbH.
Références
S. H. Bae, H. Kum, W. Kong, Y. Kim, C. Choi, B. Lee, P. Lin, Y. Park, J. Kim, Nat. Mater. 2019, 18, 550.
D. Ruzmetov, K. Zhang, G. Stan, B. Kalanyan, G. R. Bhimanapati, S. M. Eichfeld, R. A. Burke, P. B. Shah, T. P. O'regan, F. J. Crowne, A. G. Birdwell, J. A. Robinson, A. V Davydov, T. G. Ivanov, ACS Nano 2016, 10, 3580.
L. Britnell, R. V. Gorbachev, R. Jalil, B. D. Belle, F. Schedin, A. Mishchenko, T. Georgiou, M. I. Katsnelson, L. Eaves, S. V. Morozov, N. M. R. Peres, J. Leist, A. K. Geim, K. S. Novoselov, L. A. Ponomarenko, Science 2012, 335, 947.
W. J. Yu, Z. Li, H. Zhou, Y. Chen, Y. Wang, Y. Huang, X. Duan, Nat. Mater. 2013, 12, 246.
H. Yang, J. Heo, S. Park, H. J. Song, D. H. Seo, K. E. Byun, P. Kim, I. K. Yoo, H. J. Chung, K. Kim, Science 2012, 336, 1140.
K. Chung, C.-H. Lee, G.-C. Yi, Science 2010, 330, 655.
C. H. Liu, Y. C. Chang, T. B. Norris, Z. Zhong, Nat. Nanotechnol. 2014,9, 9.
N. Nerngchamnong, L. Yuan, D. C. Qi, J. Li, D. Thompson, C. A. Nijhuis, Nat. Nanotechnol. 2013, 8, 113.
Y. J. Hong, J. W. Yang, W. H. Lee, R. S. Ruoff, K. S. Kim, T. Fukui, Adv. Mater. 2013, 25, 6847.
Y. Wang, J. C. Kim, R. J. Wu, J. Martinez, X. Song, J. Yang, F. Zhao, A. Mkhoyan, H. Y. Jeong, M. Chhowalla, Nature 2019, 568, 70.
Y. Alaskar, S. Arafin, D. Wickramaratne, M. A. Zurbuchen, L. He, J. McKay, Q. Lin, M. S. Goorsky, R. K. Lake, K. L. Wang, Adv. Funct. Mater. 2014, 24, 6629.
S. Mukherjee, N. Nateghi, R. M. Jacobberger, E. Bouthillier, M. de la Mata, J. Arbiol, T. Coenen, D. Cardinal, P. Levesque, P. Desjardins, R. Martel, M. S. Arnold, O. Moutanabbir, Adv. Funct. Mater. 2018 , 28, 1705592.
P. Periwal, J. D. Thomsen, K. Reidy, G. Varnavides, D. N. Zakharov, L. Gignac, M. C. Reuter, T. J. Booth, S. Hofmann, F. M. Ross, Appl. Phys. Rev. 2020, 7.
Y. Kim, S. S. Cruz, K. Lee, B. O. Alawode, C. Choi, Y. Song, J. M. Johnson, C. Heidelberger, W. Kong, S. Choi, K. Qiao, I. Almansouri, E. A. Fitzgerald, J. Kong, A. M. Kolpak, J. Hwang, J. Kim, Nature 2017, 544, 340.
W. Kong, H. Li, K. Qiao, Y. Kim, K. Lee, Y. Nie, D. Lee, T. Osadchy, R. J. Molnar, D. K. Gaskill, R. L. Myers-Ward, K. M. Daniels, Y. Zhang, S. Sundram, Y. Yu, S. hoon Bae, S. Rajan, Y. Shao-Horn, K. Cho, A. Ougazzaden, J. C. Grossman, J. Kim, Nat. Mater. 2018, 17, 999.
S. H. Bae, K. Lu, Y. Han, S. Kim, K. Qiao, C. Choi, Y. Nie, H. Kim, H. S. Kum, P. Chen, W. Kong, B. S. Kang, C. Kim, J. Lee, Y. Baek, J. Shim, J. Park, M. Joo, D. A. Muller, K. Lee, J. Kim, Nat. Nanotechnol. 2020, 15, 272.
B. J. Kim, J. Tersoff, S. Kodambaka, M. C. Reuter, E. A. Stach, F. M. Ross, Science 2008, 322, 1070.
S. Sauze, M. R. Aziziyan, P. Brault, G. Kolhatkar, A. Ruediger, A. Korinek, D. Machon, R. Arès, A. Boucherif, Nanoscale 2020, 12, 23984.
V. I. Tokar, H. Dreyssé, Phys. Rev. B 2005, 72, 035438.
Y. Wang, Y. Shi, G. Xin, J. Lian, J. Shi, Cryst. Growth Des. 2015, 15, 4741.
S. A. Scott, M. V. Kral, S. A. Brown, Surf. Sci. 2005, 587, 175.
N. T. K. Thanh, N. Maclean, S. Mahiddine, Chem. Rev. 2014, 114, 7610.
D. R. Cassar, J. Non-Cryst. Solids 2019, 511, 183.
E. Cahyadi, Adsorption of Carbon, Silicon, and Germanium Adatoms on Graphene Sheet, University of California Los Angeles, Los Angeles 2012.
H. Zheng, R. K. Smith, Y. W. Jun, C. Kisielowski, U. Dahmen, A. Paul Alivisatos, Science 2009, 324, 1309.
L. Bardotti, P. Jensen, A. Hoareau, M. Treilleux, B. Cabaud, Phys. Rev. Lett. 1995, 5.
L. Bardotti, P. Jensen, A. Hoareau, M. Treilleux, B. Cabaud, A. Perez, F. C. S. Aires, Surf. Sci. 1996, 367, 276.
I. Utke, P. Hoffmann, J. Melngailis, J. Vac. Sci. Technol. B 2008, 26, 1197.
V. N. E. Robinson, J. L. Robins, Thin Solid Films 1974, 20, 155.
P. Sutter, E. Sutter, ACS Appl. Nano Mater. 2018, 1, 3026.
J. Zhang, F. Huang, Z. Lin, Nanoscale 2010, 2, 18.
H. O. K. Kirchner, Metall. Trans. B 1971, 2, 2861.
N. Bartelt, W. Theis, R. Tromp, Phys. Rev. B: Condens. Matter Mater. Phys. 1996, 54, 11741.
F. Haußer, A. Voigt, Phys. Rev. B: Condens. Matter Mater. Phys. 2005, 72, 035437.
F. Huang, H. Zhang, J. F. Banfieldt, Nano Lett. 2003, 3, 373.
A. M. Munshi, D. L. Dheeraj, V. T. Fauske, D. C. Kim, A. T. J. Van Helvoort, B. O. Fimland, H. Weman, Nano Lett. 2012, 12, 4570.
Z. Lu, X. Sun, W. Xie, A. Littlejohn, G. C. Wang, S. Zhang, M. A. Washington, T. M. Lu, Nanotechnology 2018, 29.
H. Gao, J. Zhou, M. Lu, W. Fa, Y. Chen, J. Appl. Phys. 2010, 107.
K. Nakada, Akira Ishii, InTech, 2011, p. 376.
B. Lewis, J. C. Anderson, Nucleation and Growth of Thin Films, Academic Press, New York 1978.
J. A. Venables, G. D. T. Spiller, M. Hanbucken, Rep. Prog. Phys. 1984, 47, 399.
S. Chae, S. Jang, W. J. Choi, Y. S. Kim, H. Chang, T. Il Lee, J. O. Lee, Nano Lett. 2017, 17, 1711.
M. Lozada-Hidalgo, S. Hu, O. Marshall, A. Mishchenko, A. N. Grigorenko, R. A. W. Dryfe, B. Radha, I. V. Grigorieva, A. K. Geim, Science 2016, 351, 68.
P. Z. Sun, Q. Yang, W. J. Kuang, Y. V. Stebunov, W. Q. Xiong, J. Yu, R. R. Nair, M. I. Katsnelson, S. J. Yuan, I. V. Grigorieva, M. Lozada-Hidalgo, F. C. Wang, A. K. Geim, Nature 2020, 579, 229.
E. Griffin, L. Mogg, G. P. Hao, G. P. Hao, G. Kalon, G. Kalon, C. Bacaksiz, G. Lopez-Polin, G. Lopez-Polin, T. Y. Zhou, V. Guarochico, J. Cai, C. Neumann, A. Winter, M. Mohn, J. H. Lee, J. Lin, J. Lin, U. Kaiser, I. V. Grigorieva, K. Suenaga, B. Özyilmaz, H. M. Cheng, H. M. Cheng, W. Ren, A. Turchanin, F. M. Peeters, A. K. Geim, M. Lozada-Hidalgo, ACS Nano 2020, 14, 7280.
L. Tsetseris, S. T. Pantelides, Carbon 2014, 67, 58.