Effects of thermal annealing on the distribution of boron and phosphorus in p-i-n structured silicon nanocrystals embedded in silicon dioxide.
atom probe tomography
density functional theory
doping
p-i-n structure
silicon nanocrystals
thermal annealing
Journal
Nanotechnology
ISSN: 1361-6528
Titre abrégé: Nanotechnology
Pays: England
ID NLM: 101241272
Informations de publication
Date de publication:
26 Nov 2021
26 Nov 2021
Historique:
received:
23
09
2021
accepted:
11
11
2021
pubmed:
12
11
2021
medline:
12
11
2021
entrez:
11
11
2021
Statut:
epublish
Résumé
Thermal annealing temperature and time dictate the microstructure of semiconductor materials such as silicon nanocrystals (Si NCs). Herein, atom probe tomography (APT) and density functional theory (DFT) calculations are used to understand the thermal annealing temperature effects on Si NCs grown in a SiO
Identifiants
pubmed: 34763327
doi: 10.1088/1361-6528/ac38e6
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Informations de copyright
© 2021 IOP Publishing Ltd.