The Fine-Structure Constant as a Ruler for the Band-Edge Light Absorption Strength of Bulk and Quantum-Confined Semiconductors.

dielectric screening fine-structure constant light absorption optical transitions quantum coupling

Journal

Nano letters
ISSN: 1530-6992
Titre abrégé: Nano Lett
Pays: United States
ID NLM: 101088070

Informations de publication

Date de publication:
24 Nov 2021
Historique:
pubmed: 16 11 2021
medline: 16 11 2021
entrez: 15 11 2021
Statut: ppublish

Résumé

Low-dimensional semiconductors have found numerous applications in optoelectronics. However, a quantitative comparison of the absorption strength of low-dimensional versus bulk semiconductors has remained elusive. Here, we report generality in the band-edge light absorptance of semiconductors, independent of their dimensions. First, we provide atomistic tight-binding calculations that show that the absorptance of semiconductor quantum wells equals

Identifiants

pubmed: 34780185
doi: 10.1021/acs.nanolett.1c02682
pmc: PMC8631736
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

9426-9432

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Auteurs

P Tim Prins (PT)

Debye Institute for Nanomaterials Science, Utrecht University, Princetonplein 1, 3584 CC Utrecht, The Netherlands.

Maryam Alimoradi Jazi (M)

Debye Institute for Nanomaterials Science, Utrecht University, Princetonplein 1, 3584 CC Utrecht, The Netherlands.

Niall A Killilea (NA)

Institute - Materials for Electronics and Energy Technology, Materials Science Department, Friedrich-Alexander-Universität Erlangen-Nürnberg, Fürther Straße 250, Nürnberg 90429, Germany.

Wiel H Evers (WH)

Optoelectronic Materials Section, Department of Chemical Engineering, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The Netherlands.

Pieter Geiregat (P)

Physics and Chemistry of Nanostructures, Department of Chemistry, Ghent University, Krijgslaan 281, B-9000 Ghent, Belgium.

Wolfgang Heiss (W)

Institute - Materials for Electronics and Energy Technology, Materials Science Department, Friedrich-Alexander-Universität Erlangen-Nürnberg, Fürther Straße 250, Nürnberg 90429, Germany.

Arjan J Houtepen (AJ)

Optoelectronic Materials Section, Department of Chemical Engineering, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The Netherlands.

Christophe Delerue (C)

University of Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia, UMR 8520 - IEMN, F-59000 Lille, France.

Zeger Hens (Z)

Physics and Chemistry of Nanostructures, Department of Chemistry, Ghent University, Krijgslaan 281, B-9000 Ghent, Belgium.

Daniel Vanmaekelbergh (D)

Debye Institute for Nanomaterials Science, Utrecht University, Princetonplein 1, 3584 CC Utrecht, The Netherlands.

Classifications MeSH