GeSnOI mid-infrared laser technology.
Journal
Light, science & applications
ISSN: 2047-7538
Titre abrégé: Light Sci Appl
Pays: England
ID NLM: 101610753
Informations de publication
Date de publication:
17 Nov 2021
17 Nov 2021
Historique:
received:
11
05
2021
accepted:
29
10
2021
revised:
25
10
2021
entrez:
17
11
2021
pubmed:
18
11
2021
medline:
18
11
2021
Statut:
epublish
Résumé
GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a number of limitations, such as poor optical confinement, lack of strain, thermal, and defects management, all of which are poorly discussed in the literature. Herein, a specific GeSn-on-insulator (GeSnOI) stack using stressor layers as dielectric optical claddings is demonstrated to be suitable for a monolithically integration of planar Group-IV semiconductor lasers on a versatile photonic platform for the near- and mid-infrared spectral range. Microdisk-shape resonators on mesa structures were fabricated from GeSnOI, after bonding a Ge
Identifiants
pubmed: 34785641
doi: 10.1038/s41377-021-00675-7
pii: 10.1038/s41377-021-00675-7
pmc: PMC8595695
doi:
Types de publication
Journal Article
Langues
eng
Pagination
232Subventions
Organisme : Agence Nationale de la Recherche (French National Research Agency)
ID : ANR-17-CE24-0015
Organisme : Agence Nationale de la Recherche (French National Research Agency)
ID : ANR-17-CE24-0015
Informations de copyright
© 2021. The Author(s).
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