High electron mobility in strained GaAs nanowires.
Journal
Nature communications
ISSN: 2041-1723
Titre abrégé: Nat Commun
Pays: England
ID NLM: 101528555
Informations de publication
Date de publication:
17 Nov 2021
17 Nov 2021
Historique:
received:
26
01
2021
accepted:
31
10
2021
entrez:
18
11
2021
pubmed:
19
11
2021
medline:
19
11
2021
Statut:
epublish
Résumé
Transistor concepts based on semiconductor nanowires promise high performance, lower energy consumption and better integrability in various platforms in nanoscale dimensions. Concerning the intrinsic transport properties of electrons in nanowires, relatively high mobility values that approach those in bulk crystals have been obtained only in core/shell heterostructures, where electrons are spatially confined inside the core. Here, it is demonstrated that the strain in lattice-mismatched core/shell nanowires can affect the effective mass of electrons in a way that boosts their mobility to distinct levels. Specifically, electrons inside the hydrostatically tensile-strained gallium arsenide core of nanowires with a thick indium aluminium arsenide shell exhibit mobility values 30-50 % higher than in equivalent unstrained nanowires or bulk crystals, as measured at room temperature. With such an enhancement of electron mobility, strained gallium arsenide nanowires emerge as a unique means for the advancement of transistor technology.
Identifiants
pubmed: 34789741
doi: 10.1038/s41467-021-27006-z
pii: 10.1038/s41467-021-27006-z
pmc: PMC8599471
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
6642Informations de copyright
© 2021. The Author(s).
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