Doping Approaches for Organic Semiconductors.


Journal

Chemical reviews
ISSN: 1520-6890
Titre abrégé: Chem Rev
Pays: United States
ID NLM: 2985134R

Informations de publication

Date de publication:
23 Feb 2022
Historique:
pubmed: 19 11 2021
medline: 19 11 2021
entrez: 18 11 2021
Statut: ppublish

Résumé

Electronic doping in organic materials has remained an elusive concept for several decades. It drew considerable attention in the early days in the quest for organic materials with high electrical conductivity, paving the way for the pioneering work on pristine organic semiconductors (OSCs) and their eventual use in a plethora of applications. Despite this early trend, however, recent strides in the field of organic electronics have been made hand in hand with the development and use of dopants to the point that are now ubiquitous. Here, we give an overview of all important advances in the area of doping of organic semiconductors and their applications. We first review the relevant literature with particular focus on the physical processes involved, discussing established mechanisms but also newly proposed theories. We then continue with a comprehensive summary of the most widely studied dopants to date, placing particular emphasis on the chemical strategies toward the synthesis of molecules with improved functionality. The processing routes toward doped organic films and the important doping-processing-nanostructure relationships, are also discussed. We conclude the review by highlighting how doping can enhance the operating characteristics of various organic devices.

Identifiants

pubmed: 34793134
doi: 10.1021/acs.chemrev.1c00581
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

4420-4492

Auteurs

Alberto D Scaccabarozzi (AD)

King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal 23955, Saudi Arabia.

Aniruddha Basu (A)

King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal 23955, Saudi Arabia.

Filip Aniés (F)

Department of Chemistry and Centre for Processable Electronics, Imperial College London, London W12 0BZ, U.K.

Jian Liu (J)

Department of Chemistry and Chemical Engineering, Chalmers University of Technology, Göteborg 412 96, Sweden.

Osnat Zapata-Arteaga (O)

Materials Science Institute of Barcelona, ICMAB-CSIC, Campus UAB, 08193 Bellaterra, Spain.

Ross Warren (R)

Institut für Physik & IRIS Adlershof, Humboldt-Universität zu Berlin, 12489 Berlin, Germany.

Yuliar Firdaus (Y)

King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal 23955, Saudi Arabia.
Research Center for Electronics and Telecommunication, Indonesian Institute of Science, Jalan Sangkuriang Komplek LIPI Building 20 level 4, Bandung 40135, Indonesia.

Mohamad Insan Nugraha (MI)

King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal 23955, Saudi Arabia.

Yuanbao Lin (Y)

King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal 23955, Saudi Arabia.

Mariano Campoy-Quiles (M)

Materials Science Institute of Barcelona, ICMAB-CSIC, Campus UAB, 08193 Bellaterra, Spain.

Norbert Koch (N)

Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Kekulé-Strasse 5, 12489 Berlin, Germany.
Institut für Physik & IRIS Adlershof, Humboldt-Universität zu Berlin, 12489 Berlin, Germany.

Christian Müller (C)

Department of Chemistry and Chemical Engineering, Chalmers University of Technology, Göteborg 412 96, Sweden.

Leonidas Tsetseris (L)

Department of Physics, National Technical University of Athens, Athens GR-15780, Greece.

Martin Heeney (M)

Department of Chemistry and Centre for Processable Electronics, Imperial College London, London W12 0BZ, U.K.

Thomas D Anthopoulos (TD)

King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal 23955, Saudi Arabia.

Classifications MeSH