Wafer-level testing of inverse-designed and adjoint-inspired vertical grating coupler designs compatible with DUV lithography.

Perfectly vertical grating couplers have various applications in optical I/O such as connector design, coupling to multicore optical fibers and multilayer silicon photonics. However, it is challenging to achieve perfectly vertical coupling without simultaneously increasing reflection. In this paper, we use the adjoint method as well as an adjoint-inspired methodology to design devices that can be fabricated using only a single-etch step in a c-Si 193 nm DUV immersion lithography process, while maintaining good coupling and low reflection. Wafer-level testing of devices fabricated by a pilot line foundry confirms that both design paradigms result in state-of-the-art experimental insertion loss (<2 dB) and bandwidths (∼20 nm) while having only moderate in-band reflection (<-10 dB). Our best design has a (median) 1.82 dB insertion loss and 21.3 nm 1 dB-bandwidth.