Ga
Ga2O3
ammonia NH3
carbon monoxide CO
doping
oxide materials
semiconductor gas sensor
Journal
Nanomaterials (Basel, Switzerland)
ISSN: 2079-4991
Titre abrégé: Nanomaterials (Basel)
Pays: Switzerland
ID NLM: 101610216
Informations de publication
Date de publication:
02 Nov 2021
02 Nov 2021
Historique:
received:
02
10
2021
revised:
23
10
2021
accepted:
30
10
2021
entrez:
27
11
2021
pubmed:
28
11
2021
medline:
28
11
2021
Statut:
epublish
Résumé
Gallium(III) oxide is a promising functional wide-gap semiconductor for high temperature gas sensors of the resistive type. Doping of Ga
Identifiants
pubmed: 34835702
pii: nano11112938
doi: 10.3390/nano11112938
pmc: PMC8624813
pii:
doi:
Types de publication
Journal Article
Langues
eng
Subventions
Organisme : Russian Science Foundation
ID : 19-13-00245
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