Memristive control of mutual spin Hall nano-oscillator synchronization for neuromorphic computing.


Journal

Nature materials
ISSN: 1476-4660
Titre abrégé: Nat Mater
Pays: England
ID NLM: 101155473

Informations de publication

Date de publication:
01 2022
Historique:
received: 10 09 2020
accepted: 07 10 2021
pubmed: 1 12 2021
medline: 1 12 2021
entrez: 30 11 2021
Statut: ppublish

Résumé

Synchronization of large spin Hall nano-oscillator (SHNO) arrays is an appealing approach toward ultrafast non-conventional computing. However, interfacing to the array, tuning its individual oscillators and providing built-in memory units remain substantial challenges. Here, we address these challenges using memristive gating of W/CoFeB/MgO/AlO

Identifiants

pubmed: 34845363
doi: 10.1038/s41563-021-01153-6
pii: 10.1038/s41563-021-01153-6
doi:

Types de publication

Journal Article Research Support, Non-U.S. Gov't

Langues

eng

Sous-ensembles de citation

IM

Pagination

81-87

Commentaires et corrections

Type : CommentIn

Informations de copyright

© 2021. The Author(s), under exclusive licence to Springer Nature Limited.

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Auteurs

Mohammad Zahedinejad (M)

Physics Department, University of Gothenburg, Gothenburg, Sweden.
NanOsc AB, Kista, Sweden.

Himanshu Fulara (H)

Physics Department, University of Gothenburg, Gothenburg, Sweden.
Department of Physics, Indian Institute of Technology Roorkee, Roorkee, India.

Roman Khymyn (R)

Physics Department, University of Gothenburg, Gothenburg, Sweden.

Afshin Houshang (A)

Physics Department, University of Gothenburg, Gothenburg, Sweden.

Shunsuke Fukami (S)

Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai, Japan.
Center for Science and Innovation in Spintronics, Tohoku University, Sendai, Japan.
Center for Spintronics Research Network, Tohoku University, Sendai, Japan.
Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai, Japan.
WPI-Advanced Institute for Materials Research, Tohoku University, Sendai, Japan.

Shun Kanai (S)

Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai, Japan.
Center for Science and Innovation in Spintronics, Tohoku University, Sendai, Japan.
Center for Spintronics Research Network, Tohoku University, Sendai, Japan.
Division for the Establishment of Frontier Sciences, Tohoku University, Sendai, Japan.

Hideo Ohno (H)

Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai, Japan.
Center for Science and Innovation in Spintronics, Tohoku University, Sendai, Japan.
Center for Spintronics Research Network, Tohoku University, Sendai, Japan.
Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai, Japan.
WPI-Advanced Institute for Materials Research, Tohoku University, Sendai, Japan.

Johan Åkerman (J)

Physics Department, University of Gothenburg, Gothenburg, Sweden. johan.akerman@physics.gu.se.
NanOsc AB, Kista, Sweden. johan.akerman@physics.gu.se.
Material and Nanophysics, School of Engineering Sciences, KTH Royal Institute of Technology, Kista, Sweden. johan.akerman@physics.gu.se.

Classifications MeSH