Role of Oxygen Vacancy Ordering and Channel Formation in Tuning Intercalation Pseudocapacitance in Mo Single-Ion-Implanted CeO
ceria 2D nanoflakes
defect engineering and architectural design
ion implantation
oxygen vacancy ordering and channel formation
surface and intercalation pseudocapacitance
Journal
ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991
Informations de publication
Date de publication:
22 Dec 2021
22 Dec 2021
Historique:
pubmed:
8
12
2021
medline:
8
12
2021
entrez:
7
12
2021
Statut:
ppublish
Résumé
Metal oxide pseudocapacitors are limited by low electrical and ionic conductivities. The present work integrates defect engineering and architectural design to exhibit, for the first time, intercalation pseudocapacitance in CeO
Identifiants
pubmed: 34875170
doi: 10.1021/acsami.1c14484
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM