Boosting quantum yields in two-dimensional semiconductors via proximal metal plates.
Journal
Nature communications
ISSN: 2041-1723
Titre abrégé: Nat Commun
Pays: England
ID NLM: 101528555
Informations de publication
Date de publication:
07 Dec 2021
07 Dec 2021
Historique:
received:
15
10
2020
accepted:
18
11
2021
entrez:
8
12
2021
pubmed:
9
12
2021
medline:
9
12
2021
Statut:
epublish
Résumé
Monolayer transition metal dichalcogenides (1L-TMDs) have tremendous potential as atomically thin, direct bandgap semiconductors that can be used as convenient building blocks for quantum photonic devices. However, the short exciton lifetime due to the defect traps and the strong exciton-exciton interaction in TMDs has significantly limited the efficiency of exciton emission from this class of materials. Here, we show that exciton-exciton interaction in 1L-WS
Identifiants
pubmed: 34876573
doi: 10.1038/s41467-021-27418-x
pii: 10.1038/s41467-021-27418-x
pmc: PMC8651657
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
7095Informations de copyright
© 2021. The Author(s).
Références
Mak, K. F., Lee, C., Hone, J., Shan, J. & Heinz, T. F. Atomically thin MoS
pubmed: 21230799
doi: 10.1103/PhysRevLett.105.136805
Splendiani, A. et al. Emerging photoluminescence in monolayer MoS
pubmed: 20229981
doi: 10.1021/nl903868w
Poellmann, C. et al. Resonant internal quantum transitions and femtosecond radiative decay of excitons in monolayer WSe
pubmed: 26168345
doi: 10.1038/nmat4356
Malic, E. et al. Dark excitons in transition metal dichalcogenides. Phys. Rev. Mater. 2, 014002 (2018).
doi: 10.1103/PhysRevMaterials.2.014002
Mak, K. F. et al. Tightly bound trions in monolayer MoS
pubmed: 23202371
doi: 10.1038/nmat3505
Lee, Y. et al. Near-field spectral mapping of individual exciton complexes of monolayer WS
pubmed: 28124703
doi: 10.1039/C6NR08813A
Peimyoo, N. et al. Chemically driven tunable light emission of charged and neutral excitons in monolayer WS
pubmed: 25317839
doi: 10.1021/nn504196n
Lee, Y. & Kim, J. Controlling lattice defects and inter-exciton interactions in monolayer transition metal dichalcogenides for efficient light emission. ACS Photonics 5, 4187–4194 (2018).
doi: 10.1021/acsphotonics.8b00645
Wang, H., Zhang, C. & Rana, F. Ultrafast dynamics of defect-assisted electron–hole recombination in monolayer MoS
pubmed: 25546602
doi: 10.1021/nl503636c
Roy, S. et al. Atomic observation of filling vacancies in monolayer transition metal sulfides by chemically sourced sulfur atoms. Nano Lett. 18, 4523–4530 (2018).
pubmed: 29921125
doi: 10.1021/acs.nanolett.8b01714
Mouri, S., Miyauchi, Y. & Matsuda, K. Tunable photoluminescence of monolayer MoS
pubmed: 24215567
doi: 10.1021/nl403036h
Amani, M. et al. Near-unity photoluminescence quantum yield in MoS
pubmed: 26612948
doi: 10.1126/science.aad2114
Park, J. H. et al. Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface. Sci. Adv. 3, e1701661 (2017).
pubmed: 29062892
pmcid: 5650486
doi: 10.1126/sciadv.1701661
Lien, D.-H. et al. Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors. Science 364, 468–471 (2019).
pubmed: 31048488
doi: 10.1126/science.aaw8053
Sun, D. et al. Observation of rapid exciton–exciton annihilation in monolayer molybdenum disulfide. Nano Lett. 14, 5625–5629 (2014).
pubmed: 25171389
doi: 10.1021/nl5021975
Yuan, L. & Huang, L. Exciton dynamics and annihilation in WS
pubmed: 25826397
doi: 10.1039/C5NR00383K
Amani, M. et al. Recombination kinetics and effects of superacid treatment in sulfur- and selenium-based transition metal dichalcogenides. Nano Lett. 16, 2786–2791 (2016).
pubmed: 26978038
doi: 10.1021/acs.nanolett.6b00536
Lee, Y. et al. Impeding exciton-exciton annihilation in monolayer WS
doi: 10.1021/acsphotonics.8b00249
Han, B. et al. Exciton states in monolayer MoSe
Taylor, R. A., Adams, R. A., Ryan, J. F. & Park, R. M. Exciton recombination dynamics in ZnCdSe/ZnSe quantum wells. J. Cryst. Growth 159, 822–825 (1996).
doi: 10.1016/0022-0248(95)00702-4
Sundaram, R. S. et al. Electroluminescence in single layer MoS
pubmed: 23514373
doi: 10.1021/nl400516a
Lien, D.-H. et al. Large-area and bright pulsed electroluminescence in monolayer semiconductors. Nat. Comm. 9, 1229 (2018).
doi: 10.1038/s41467-018-03218-8
Wang, J., Verzhbitskiy, I. & Eda, G. Electroluminescent devices based on 2D semiconducting transition metal dichalcogenides. Adv. Mater. 30, 1802687 (2018).
doi: 10.1002/adma.201802687
Goodman, A. J. et al. Substrate-dependent exciton diffusion and annihilation in chemically treated MoS
doi: 10.1021/acs.jpcc.0c04000
Hoshi, Y. et al. Suppression of exciton-exciton annihilation in tungsten disulfide monolayers encapsulated by hexagonal boron nitrides. Phys. Rev. B 95, 241403 (2017).
doi: 10.1103/PhysRevB.95.241403
Zipfel, J. et al. Exciton diffusion in monolayer semiconductors with suppressed disorder. Phys. Rev. B 101, 115430 (2020).
doi: 10.1103/PhysRevB.101.115430
Liu, H., Wang, C., Liu, D. & Luo, J. Neutral and defect-induced exciton annihilation in defective monolayer WS
pubmed: 30964503
doi: 10.1039/C9NR00967A
Kim, H., Uddin, S. Z., Higashitarumizu, N., Rabani, E. & Javey, A. Inhibited nonradiative decay at all exciton densities in monolayer semiconductors. Science 373, 448–452 (2021).
pubmed: 34437119
doi: 10.1126/science.abi9193
Buscema, M., Steele, G. A., van der Zant, H. S. J. & Castellanos-Gomez, A. The effect of the substrate on the Raman and photoluminescence emission of single-layer MoS
doi: 10.1007/s12274-014-0424-0
Yoon, D. et al. Interference effect on Raman spectrum of graphene on SiO
doi: 10.1103/PhysRevB.80.125422
Schulman, D. S., Arnold, A. J. & Das, S. Contact engineering for 2D materials and devices. Chem. Soc. Rev. 47, 3037–3058 (2018).
pubmed: 29498729
doi: 10.1039/C7CS00828G
Shang, J. et al. Observation of excitonic fine structure in a 2D transition-metal dichalcogenide semiconductor. ACS Nano 9, 647–655 (2015).
pubmed: 25560634
doi: 10.1021/nn5059908
Gong, C. et al. Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors. Appl. Phys. Lett. 103, 053513 (2013).
doi: 10.1063/1.4817409
Liu, Y., Stradins, P. & Wei, S.-H. Van der waals metal-semiconductor junction: Weak fermi level pinning enables effective tuning of schottky barrier. Sci. Adv. 2, e1600069 (2016).
pubmed: 27152360
pmcid: 4846439
doi: 10.1126/sciadv.1600069
Robert, C. et al. Optical spectroscopy of excited exciton states in MoS
doi: 10.1103/PhysRevMaterials.2.011001
Stier, A. V. et al. Magnetooptics of exciton Rydberg states in a monolayer semiconductor. Phys. Rev. Lett. 120, 057405 (2018).
pubmed: 29481196
doi: 10.1103/PhysRevLett.120.057405
Kulig, M. et al. Exciton diffusion and halo effects in monolayer semiconductors. Phys. Rev. Lett. 120, 207401 (2018).
pubmed: 29864294
doi: 10.1103/PhysRevLett.120.207401
Jackson, J. D. Classical Electrodynamics, 2nd ed. (Wiley, 1975)
Cavalcante, L. S. R., Chaves, A., Van Duppen, B., Peeters, F. M. & Reichman, D. R. Electrostatics of electron-hole interactions in van der Waals heterostructures. Phys. Rev. B 97, 125427 (2018).
doi: 10.1103/PhysRevB.97.125427
Florian, M. et al. The Dielectric Impact of Layer Distances on Exciton and Trion Binding Energies in van der Waals Heterostructures. Nano Lett. 18, 2725–2732 (2018).
pubmed: 29558797
doi: 10.1021/acs.nanolett.8b00840
Rytova, N. S. Screened potential of a point charge in a thin film. Moscow University Physics Bulletin 30, 18 (1967).
Keldysh, L. V. Coulomb interaction in thin semiconductor and semimetal films. J. Exp. Theor. Phys. Lett. 29, 716–719 (1979).
Principi, A., Van Loon, E., Polini, M. & Katsnelson, M. I. Confining graphene plasmons to the ultimate limit. Phys. Rev. B 98, 35427 (2018).
doi: 10.1103/PhysRevB.98.035427
Kavoulakis, G. M. & Baym, G. Auger decay of degenerate and Bose-condensed excitons in Cu
doi: 10.1103/PhysRevB.54.16625
Wang, F., Wu, Y., Hybertsen, M. S. & Heinz, T. F. Auger recombination of excitons in one-dimensional systems. Phys. Rev. B - Condens. Matter Mater. Phys. 73, 1–5 (2006).
doi: 10.1103/PhysRevB.73.245424
Javerzac-Galy, C. et al. Excitonic Emission of Monolayer Semiconductors Near-Field Coupled to High-Q Microresonators. Nano Lett. 18, 3138–3146 (2018).
pubmed: 29624396
pmcid: 5946169
doi: 10.1021/acs.nanolett.8b00749
Raja, A. et al. Dielectric disorder in two-dimensional materials. Nat. Nanotechnol. 14, 832–837 (2019).
pubmed: 31427747
doi: 10.1038/s41565-019-0520-0
Castellanos-Gomez, A. et al. Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping. 2D Mater. 7, 025034 (2014).