Dark exciton anti-funneling in atomically thin semiconductors.
Journal
Nature communications
ISSN: 2041-1723
Titre abrégé: Nat Commun
Pays: England
ID NLM: 101528555
Informations de publication
Date de publication:
10 Dec 2021
10 Dec 2021
Historique:
received:
09
09
2021
accepted:
16
11
2021
entrez:
11
12
2021
pubmed:
12
12
2021
medline:
12
12
2021
Statut:
epublish
Résumé
Transport of charge carriers is at the heart of current nanoelectronics. In conventional materials, electronic transport can be controlled by applying electric fields. Atomically thin semiconductors, however, are governed by excitons, which are neutral electron-hole pairs and as such cannot be controlled by electrical fields. Recently, strain engineering has been introduced to manipulate exciton propagation. Strain-induced energy gradients give rise to exciton funneling up to a micrometer range. Here, we combine spatiotemporal photoluminescence measurements with microscopic theory to track the way of excitons in time, space and energy. We find that excitons surprisingly move away from high-strain regions. This anti-funneling behavior can be ascribed to dark excitons which possess an opposite strain-induced energy variation compared to bright excitons. Our findings open new possibilities to control transport in exciton-dominated materials. Overall, our work represents a major advance in understanding exciton transport that is crucial for technological applications of atomically thin materials.
Identifiants
pubmed: 34893602
doi: 10.1038/s41467-021-27425-y
pii: 10.1038/s41467-021-27425-y
pmc: PMC8664915
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
7221Subventions
Organisme : Deutsche Forschungsgemeinschaft (German Research Foundation)
ID : CRC 1083
Organisme : EC | Horizon 2020 Framework Programme (EU Framework Programme for Research and Innovation H2020)
ID : Graphene Flagship
Organisme : VINNOVA (Swedish Governmental Agency for Innovation Systems)
ID : 2DTECH
Informations de copyright
© 2021. The Author(s).
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