Strain-Controlled Quantum Dot Fine Structure for Entangled Photon Generation at 1550 nm.

entangled photons fine-structure splitting quantum state tomography semiconductor quantum dots single-photon source strain tuning telecom wavelengths

Journal

Nano letters
ISSN: 1530-6992
Titre abrégé: Nano Lett
Pays: United States
ID NLM: 101088070

Informations de publication

Date de publication:
22 Dec 2021
Historique:
pubmed: 14 12 2021
medline: 14 12 2021
entrez: 13 12 2021
Statut: ppublish

Résumé

Entangled photon generation at 1550 nm in the telecom C-band is of critical importance as it enables the realization of quantum communication protocols over long distance using deployed telecommunication infrastructure. InAs epitaxial quantum dots have recently enabled on-demand generation of entangled photons in this wavelength range. However, time-dependent state evolution, caused by the fine-structure splitting, currently limits the fidelity to a specific entangled state. Here, we show fine-structure suppression for InAs quantum dots using micromachined piezoelectric actuators and demonstrate generation of highly entangled photons at 1550 nm. At the lowest fine-structure setting, we obtain a maximum fidelity of 90.0 ± 2.7% (concurrence of 87.5 ± 3.1%). The concurrence remains high also for moderate (weak) temporal filtering, with values close to 80% (50%), corresponding to 30% (80%) of collected photons, respectively. The presented fine-structure control opens the way for exploiting entangled photons from quantum dots in fiber-based quantum communication protocols.

Identifiants

pubmed: 34894699
doi: 10.1021/acs.nanolett.1c04024
pmc: PMC8704189
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

10501-10506

Commentaires et corrections

Type : ErratumIn

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Auteurs

Thomas Lettner (T)

Department of Applied Physics, KTH Royal Institute of Technology, Albanova University Centre, Roslagstullsbacken 21, 106 91 Stockholm, Sweden.

Samuel Gyger (S)

Department of Applied Physics, KTH Royal Institute of Technology, Albanova University Centre, Roslagstullsbacken 21, 106 91 Stockholm, Sweden.

Katharina D Zeuner (KD)

Department of Applied Physics, KTH Royal Institute of Technology, Albanova University Centre, Roslagstullsbacken 21, 106 91 Stockholm, Sweden.

Lucas Schweickert (L)

Department of Applied Physics, KTH Royal Institute of Technology, Albanova University Centre, Roslagstullsbacken 21, 106 91 Stockholm, Sweden.

Stephan Steinhauer (S)

Department of Applied Physics, KTH Royal Institute of Technology, Albanova University Centre, Roslagstullsbacken 21, 106 91 Stockholm, Sweden.

Carl Reuterskiöld Hedlund (C)

Department of Electrical Engineering, KTH Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden.

Sandra Stroj (S)

Research Center for Microtechnology, Vorarlberg University of Applied Sciences, Campus V, Hochschulstrasse 1, 6850 Dornbirn, Austria.

Armando Rastelli (A)

Institute of Semiconductor and Solid State Physics, Johannes Kepler University, 4040 Linz, Austria.

Mattias Hammar (M)

Department of Electrical Engineering, KTH Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden.

Rinaldo Trotta (R)

Department of Physics, Sapienza University of Rome, Piazzale A. Moro 5, 00185 Rome, Italy.

Klaus D Jöns (KD)

Department of Applied Physics, KTH Royal Institute of Technology, Albanova University Centre, Roslagstullsbacken 21, 106 91 Stockholm, Sweden.

Val Zwiller (V)

Department of Applied Physics, KTH Royal Institute of Technology, Albanova University Centre, Roslagstullsbacken 21, 106 91 Stockholm, Sweden.

Classifications MeSH