In-plane InGaAs/Ga(As)Sb nanowire based tunnel junctions grown by selective area molecular beam epitaxy.
Esaki tunnel diodes
in-plane nanowire
molecular beam epitaxy
selective area growth
Journal
Nanotechnology
ISSN: 1361-6528
Titre abrégé: Nanotechnology
Pays: England
ID NLM: 101241272
Informations de publication
Date de publication:
12 Jan 2022
12 Jan 2022
Historique:
received:
15
11
2021
accepted:
22
12
2021
pubmed:
23
12
2021
medline:
23
12
2021
entrez:
22
12
2021
Statut:
epublish
Résumé
In-plane InGaAs/Ga(As)Sb heterojunction tunnel diodes are fabricated by selective area molecular beam epitaxy with two different architectures: either radial InGaAs core/Ga(As)Sb shell nanowires or axial InGaAs/GaSb heterojunctions. In the former case, we unveil the impact of strain relaxation and alloy composition fluctuations at the nanoscale on the tunneling properties of the diodes, whereas in the latter case we demonstrate that template assisted molecular beam epitaxy can be used to achieve a very precise control of tunnel diodes dimensions at the nanoscale with a scalable process. In both cases, negative differential resistances with large peak current densities are achieved.
Identifiants
pubmed: 34937011
doi: 10.1088/1361-6528/ac45c5
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Informations de copyright
© 2022 IOP Publishing Ltd.