First-Principles Study of the Structural, Electronic, and Enhanced Optical Properties of SnS/TaS

Ohmic contact Schottky barrier TaS2 monolayer dielectric function heterostructure optical absorption

Journal

ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991

Informations de publication

Date de publication:
12 Jan 2022
Historique:
pubmed: 24 12 2021
medline: 24 12 2021
entrez: 23 12 2021
Statut: ppublish

Résumé

Although the electronics and optoelectronics based on two-dimensional (2D) SnS have attracted great interest, their development is hindered by the large contact resistance at the interface of the metal-semiconductor junction. In this work, using first-principles calculations, we evaluate the contact performance in a van der Waals heterostructure composed of 2D SnS and TaS

Identifiants

pubmed: 34939777
doi: 10.1021/acsami.1c16020
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

2177-2184

Auteurs

Arzoo Hassan (A)

School of Materials Science and Engineering, Peking University, Beijing 100871, China.

Muhammad Azhar Nazir (MA)

School of Materials Science and Engineering, Peking University, Beijing 100871, China.

Yiheng Shen (Y)

School of Materials Science and Engineering, Peking University, Beijing 100871, China.
Center for Applied Physics and Technology, HEPDS, College of Engineering, Peking University, Beijing 100871, China.

Yaguang Guo (Y)

Department of Physics, School of Science, Beijing Jiaotong University, Beijing 100044, China.

Wei Kang (W)

Center for Applied Physics and Technology, HEPDS, College of Engineering, Peking University, Beijing 100871, China.

Qian Wang (Q)

School of Materials Science and Engineering, Peking University, Beijing 100871, China.
Center for Applied Physics and Technology, HEPDS, College of Engineering, Peking University, Beijing 100871, China.

Classifications MeSH