First-Principles Study of the Structural, Electronic, and Enhanced Optical Properties of SnS/TaS
Ohmic contact
Schottky barrier
TaS2 monolayer
dielectric function
heterostructure
optical absorption
Journal
ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991
Informations de publication
Date de publication:
12 Jan 2022
12 Jan 2022
Historique:
pubmed:
24
12
2021
medline:
24
12
2021
entrez:
23
12
2021
Statut:
ppublish
Résumé
Although the electronics and optoelectronics based on two-dimensional (2D) SnS have attracted great interest, their development is hindered by the large contact resistance at the interface of the metal-semiconductor junction. In this work, using first-principles calculations, we evaluate the contact performance in a van der Waals heterostructure composed of 2D SnS and TaS
Identifiants
pubmed: 34939777
doi: 10.1021/acsami.1c16020
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM