Graphene-Based Microwave Circuits: A Review.
2D materials
amplifiers
diodes
field-effect transistors
frequency multipliers
graphene
monolithic microwave integrated circuits
Journal
Advanced materials (Deerfield Beach, Fla.)
ISSN: 1521-4095
Titre abrégé: Adv Mater
Pays: Germany
ID NLM: 9885358
Informations de publication
Date de publication:
Dec 2022
Dec 2022
Historique:
revised:
21
12
2021
received:
21
10
2021
pubmed:
28
12
2021
medline:
28
12
2021
entrez:
27
12
2021
Statut:
ppublish
Résumé
Over the past two decades, research on 2D materials has received much interest. Graphene is the most promising candidate regarding high-frequency applications thus far due to is high carrier mobility. Here, the research about the employment of graphene in micro- and millimeter-wave circuits is reviewed. The review starts with the different methodologies to grow and transfer graphene, before discussing the way graphene-based field-effect-transistors (GFETs) and diodes are built. A review on different approaches for realizing these devices is provided before discussing the employment of both GFETs and graphene diodes in different micro- and millimeter-wave circuits, showing the possibilities but also the limitations of this 2D material for high-frequency applications.
Identifiants
pubmed: 34957614
doi: 10.1002/adma.202108473
doi:
Types de publication
Journal Article
Review
Langues
eng
Sous-ensembles de citation
IM
Pagination
e2108473Subventions
Organisme : Deutsche Forschungsgemeinschaft
ID : WA 4139/1-1
Organisme : Deutsche Forschungsgemeinschaft
ID : NE1633/3-2
Organisme : BMBF
ID : 03XP0210
Organisme : Horizon 2020 Framework Programme
ID : 881603
Organisme : Horizon 2020 Framework Programme
ID : 785219
Organisme : Horizon 2020 Framework Programme
ID : 829035
Organisme : Horizon 2020 Framework Programme
ID : 863337
Organisme : Horizon 2020 Framework Programme
ID : 952792
Organisme : Horizon 2020 Framework Programme
ID : 101006963
Informations de copyright
© 2022 The Authors. Advanced Materials published by Wiley-VCH GmbH.
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