Bipolar Electric-Field Switching of Perpendicular Magnetic Tunnel Junctions through Voltage-Controlled Exchange Coupling.
Magnetic Tunnel Junctions
Spintronics
Synthetic antiferromagnetic free layer
Voltage-Controlled Exchange Coupling (VCEC)
Journal
Nano letters
ISSN: 1530-6992
Titre abrégé: Nano Lett
Pays: United States
ID NLM: 101088070
Informations de publication
Date de publication:
26 Jan 2022
26 Jan 2022
Historique:
pubmed:
5
1
2022
medline:
5
1
2022
entrez:
4
1
2022
Statut:
ppublish
Résumé
Perpendicular magnetic tunnel junctions (p-MTJs) switched utilizing bipolar electric fields have extensive applications in energy-efficient memory and logic devices. Voltage-controlled magnetic anisotropy linearly lowers the energy barrier of the ferromagnetic layer via the electric field effect and efficiently switches p-MTJs only with a unipolar behavior. Here, we demonstrate a bipolar electric field effect switching of 100 nm p-MTJs with a synthetic antiferromagnetic free layer through voltage-controlled exchange coupling (VCEC). The switching current density, ∼1.1 × 10
Identifiants
pubmed: 34982564
doi: 10.1021/acs.nanolett.1c03395
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM