Three-Terminal Ovonic Threshold Switch (3T-OTS) with Tunable Threshold Voltage for Versatile Artificial Sensory Neurons.

artificial retinal ganglion cell gate-tunable Ovonic threshold switch in-sensor computing neuromorphic spiking neural network

Journal

Nano letters
ISSN: 1530-6992
Titre abrégé: Nano Lett
Pays: United States
ID NLM: 101088070

Informations de publication

Date de publication:
26 01 2022
Historique:
pubmed: 14 1 2022
medline: 1 2 2022
entrez: 13 1 2022
Statut: ppublish

Résumé

Inspired by information processing in biological systems, sensor-combined edge-computing systems attract attention requesting artificial sensory neurons as essential ingredients. Here, we introduce a simple and versatile structure of artificial sensory neurons based on a novel three-terminal Ovonic threshold switch (3T-OTS), which features an electrically controllable threshold voltage (

Identifiants

pubmed: 35025519
doi: 10.1021/acs.nanolett.1c04125
doi:

Types de publication

Journal Article Research Support, Non-U.S. Gov't

Langues

eng

Sous-ensembles de citation

IM

Pagination

733-739

Auteurs

Hyejin Lee (H)

Center for Neuromorphic Engineering, Korea Institute of Science and Technology, Seoul 02792, Korea.
Department of Physics, Yonsei University, Seoul 03722, Korea.

Seong Won Cho (SW)

Center for Neuromorphic Engineering, Korea Institute of Science and Technology, Seoul 02792, Korea.
Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Korea.

Seon Jeong Kim (SJ)

Center for Neuromorphic Engineering, Korea Institute of Science and Technology, Seoul 02792, Korea.
Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea.

Jaesang Lee (J)

Center for Neuromorphic Engineering, Korea Institute of Science and Technology, Seoul 02792, Korea.
Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Korea.

Keun Su Kim (KS)

Department of Physics, Yonsei University, Seoul 03722, Korea.

Inho Kim (I)

Center for Neuromorphic Engineering, Korea Institute of Science and Technology, Seoul 02792, Korea.

Jong-Keuk Park (JK)

Center for Neuromorphic Engineering, Korea Institute of Science and Technology, Seoul 02792, Korea.

Joon Young Kwak (JY)

Center for Neuromorphic Engineering, Korea Institute of Science and Technology, Seoul 02792, Korea.

Jaewook Kim (J)

Center for Neuromorphic Engineering, Korea Institute of Science and Technology, Seoul 02792, Korea.

Jongkil Park (J)

Center for Neuromorphic Engineering, Korea Institute of Science and Technology, Seoul 02792, Korea.

YeonJoo Jeong (Y)

Center for Neuromorphic Engineering, Korea Institute of Science and Technology, Seoul 02792, Korea.

Gyu Weon Hwang (GW)

Center for Neuromorphic Engineering, Korea Institute of Science and Technology, Seoul 02792, Korea.

Kyeong-Seok Lee (KS)

Center for Neuromorphic Engineering, Korea Institute of Science and Technology, Seoul 02792, Korea.

Daniele Ielmini (D)

Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Piazza L. da Vinci 32, 20133 Milano, Italy.

Suyoun Lee (S)

Center for Neuromorphic Engineering, Korea Institute of Science and Technology, Seoul 02792, Korea.
Division of Nano & Information Technology, Korea University of Science and Technology, Daejeon 34316, Korea.

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