Organic Chloride Salt Interfacial Modified Crystallization for Efficient Antimony Selenosulfide Solar Cells.

Sb2(SSe)3 crystallization hydrothermal interfacial modification trap states

Journal

ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991

Informations de publication

Date de publication:
26 Jan 2022
Historique:
pubmed: 18 1 2022
medline: 18 1 2022
entrez: 17 1 2022
Statut: ppublish

Résumé

Antimony selenosulfide, Sb

Identifiants

DOI: 10.1021/acsami.1c20779 PMID: 35034451
pubmed: 35034451
doi: 10.1021/acsami.1c20779
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

4276-4284

Auteurs

Muhammad Azam (M)

Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China.
Department of Physics, Faculty of Sciences, University of Central Punjab, Lahore 54000, Pakistan.

Yan-Di Luo (YD)

Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China.
Univ Rennes, CNRS, ISCR (Institut des Sciences Chimiques de Rennes) UMR 6226, Rennes F-35000, France.

Rong Tang (R)

Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China.

Shuo Chen (S)

Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China.

Zhuang-Hao Zheng (ZH)

Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China.
ORCID: 0000-0002-2475-9826

Zheng-Hua Su (ZH)

Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China.
ORCID: 0000-0003-2137-3933

Ali Hassan (A)

Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China.
ORCID: 0000-0002-0066-2296

Ping Fan (P)

Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China.

Hong-Li Ma (HL)

Univ Rennes, CNRS, ISCR (Institut des Sciences Chimiques de Rennes) UMR 6226, Rennes F-35000, France.

Tao Chen (T)

Hefei National Laboratory for Physical Sciences at Microscale, CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, School of Chemistry and Materials Science, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China.
ORCID: 0000-0002-3483-8341

Guang-Xing Liang (GX)

Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China.
ORCID: 0000-0002-9033-4885

Xiang-Hua Zhang (XH)

Univ Rennes, CNRS, ISCR (Institut des Sciences Chimiques de Rennes) UMR 6226, Rennes F-35000, France.

Classifications MeSH