Comprehensive stoichiometric studies on the reaction of silicon in HF/HNO

Journal

Physical chemistry chemical physics : PCCP
ISSN: 1463-9084
Titre abrégé: Phys Chem Chem Phys
Pays: England
ID NLM: 100888160

Informations de publication

Date de publication:
02 Feb 2022
Historique:
pubmed: 19 1 2022
medline: 19 1 2022
entrez: 18 1 2022
Statut: epublish

Résumé

The stoichiometry of the wet chemical etching of silicon in concentrated binary and ternary mixtures of HF, HNO

Identifiants

DOI: 10.1039/d1cp05418j PMID: 35040846
pubmed: 35040846
doi: 10.1039/d1cp05418j
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

3094-3108

Auteurs

Anja Rietig (A)

Brandenburg University of Technology Cottbus-Senftenberg, Department of Physical Chemistry, 01968 Senftenberg, Germany. Anja.Rietig@b-tu.de.
ORCID: 0000-0002-2448-6856

Thomas Langner (T)

Brandenburg University of Technology Cottbus-Senftenberg, Department of Physical Chemistry, 01968 Senftenberg, Germany. Anja.Rietig@b-tu.de.
ORCID: 0000-0002-5979-6977

Jörg Acker (J)

Brandenburg University of Technology Cottbus-Senftenberg, Department of Physical Chemistry, 01968 Senftenberg, Germany. Anja.Rietig@b-tu.de.
ORCID: 0000-0002-1325-1111

Classifications MeSH