Photobase-Triggered Formation of 3D Epitaxially Fused Quantum Dot Superlattices with High Uniformity and Low Bulk Defect Densities.

Highly ordered epitaxially fused colloidal quantum dot (QD) superlattices (epi-SLs) promise to combine the size-tunable photophysics of QDs with the efficient charge transport of bulk semiconductors. However, current epi-SL fabrication methods are crude and result in structurally and chemically inhomogeneous samples with high concentrations of extended defects that localize carriers and prevent the emergence of electronic mini-bands. Needed fabrication improvements are hampered by inadequate understanding of the ligand chemistry that causes epi-SL conversion from the unfused parent SL. Here we show that epi-SL formation by the conventional method of amine injection into an ethylene glycol subphase under a floating QD film occurs by deprotonation of glycol by the amine and subsequent exchange of oleate by glycoxide on the QD surface. By replacing the amine with hydroxide ion, we demonstrate that any Brønsted-Lowry base that creates a sufficient dose of glycoxide can produce the epi-SL. We then introduce an epi-SL fabrication method that replaces point injection of a base with contactless and uniform illumination of a dissolved photobase. Quantitative mapping of multilayer (3D) films shows that our photobase-made epi-SLs are chemically and structurally uniform and have much lower concentrations of bulk defects compared to the highly inhomogeneous and defect-rich epi-SLs produced by amine point injection. The structural-chemical uniformity and structural perfection of photobase-made epi-SLs make them leading candidates for achieving emergent mini-band charge transport in a self-assembled mesoscale solid.