Sub-Nanometer Interfacial Oxides on Highly Oriented Pyrolytic Graphite and Carbon Nanotubes Enabled by Lateral Oxide Growth.

atomic layer deposition carbon nanotubes effective oxide thickness field effect transistor metal oxide semiconductor capacitors

Journal

ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991

Informations de publication

Date de publication:
09 Mar 2022
Historique:
pubmed: 23 2 2022
medline: 23 2 2022
entrez: 22 2 2022
Statut: ppublish

Résumé

A new generation of compact and high-speed electronic devices, based on carbon, would be enabled through the development of robust gate oxides with sub-nanometer effective oxide thickness (EOT) on carbon nanotubes or graphene nanoribbons. However, to date, the lack of dangling bonds on sp

Identifiants

DOI: 10.1021/acsami.1c21743 PMID: 35192341
pubmed: 35192341
doi: 10.1021/acsami.1c21743
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

11873-11882

Auteurs

Zichen Zhang (Z)

Materials Science and Engineering Program, Department of Mechanical Engineering, University of California, La Jolla, San Diego, California 92093, United States.
ORCID: 0000-0001-8028-3271

Matthias Passlack (M)

Corporate Research, Taiwan Semiconductor Manufacturing Company, San Jose, California 95134, United States.

Gregory Pitner (G)

Corporate Research, Taiwan Semiconductor Manufacturing Company, San Jose, California 95134, United States.
ORCID: 0000-0002-0518-3745

Cheng-Hsuan Kuo (CH)

Materials Science and Engineering Program, Department of Mechanical Engineering, University of California, La Jolla, San Diego, California 92093, United States.

Scott T Ueda (ST)

Materials Science and Engineering Program, Department of Mechanical Engineering, University of California, La Jolla, San Diego, California 92093, United States.

James Huang (J)

Materials Science and Engineering Program, Department of Mechanical Engineering, University of California, La Jolla, San Diego, California 92093, United States.

Harshil Kashyap (H)

Materials Science and Engineering Program, Department of Mechanical Engineering, University of California, La Jolla, San Diego, California 92093, United States.

Victor Wang (V)

Materials Science and Engineering Program, Department of Mechanical Engineering, University of California, La Jolla, San Diego, California 92093, United States.

Jacob Spiegelman (J)

Department of Chemistry and Biochemistry, University of California, La Jolla, San Diego, California 92093, United States.

Kai-Tak Lam (KT)

Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu 30078, Taiwan.

Yu-Chia Liang (YC)

Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu 30078, Taiwan.

San Lin Liew (SL)

Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu 30078, Taiwan.

Chen-Feng Hsu (CF)

Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu 30078, Taiwan.

Andrew C Kummel (AC)

Department of Chemistry and Biochemistry, University of California, La Jolla, San Diego, California 92093, United States.
ORCID: 0000-0001-8301-9855

Prabhakar Bandaru (P)

Materials Science and Engineering Program, Department of Mechanical Engineering, University of California, La Jolla, San Diego, California 92093, United States.
ORCID: 0000-0003-4497-9620

Classifications MeSH