Interfacial ferroelectricity in marginally twisted 2D semiconductors.
Journal
Nature nanotechnology
ISSN: 1748-3395
Titre abrégé: Nat Nanotechnol
Pays: England
ID NLM: 101283273
Informations de publication
Date de publication:
Apr 2022
Apr 2022
Historique:
received:
09
08
2021
accepted:
04
01
2022
pubmed:
26
2
2022
medline:
26
2
2022
entrez:
25
2
2022
Statut:
ppublish
Résumé
Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of new metamaterials. Here we demonstrate a room temperature ferroelectric semiconductor that is assembled using mono- or few-layer MoS
Identifiants
pubmed: 35210566
doi: 10.1038/s41565-022-01072-w
pii: 10.1038/s41565-022-01072-w
pmc: PMC9018412
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
390-395Subventions
Organisme : EC | EU Framework Programme for Research and Innovation H2020 | H2020 Priority Excellent Science | H2020 European Research Council (H2020 Excellent Science - European Research Council)
ID : 101001515
Organisme : EC | EU Framework Programme for Research and Innovation H2020 | H2020 Priority Excellent Science | H2020 European Research Council (H2020 Excellent Science - European Research Council)
ID : 881603
Organisme : RCUK | Engineering and Physical Sciences Research Council (EPSRC)
ID : EP/V007033/1
Organisme : RCUK | Engineering and Physical Sciences Research Council (EPSRC)
ID : EP/V026496/1
Organisme : Royal Society
ID : URF
Informations de copyright
© 2022. The Author(s).
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