Crystallization and Electrical Properties of Ge-Rich GeSbTe Alloys.
Ge-rich alloys
crystallization temperature
electrical properties
segregation
Journal
Nanomaterials (Basel, Switzerland)
ISSN: 2079-4991
Titre abrégé: Nanomaterials (Basel)
Pays: Switzerland
ID NLM: 101610216
Informations de publication
Date de publication:
14 Feb 2022
14 Feb 2022
Historique:
received:
29
12
2021
revised:
31
01
2022
accepted:
08
02
2022
entrez:
26
2
2022
pubmed:
27
2
2022
medline:
27
2
2022
Statut:
epublish
Résumé
Enrichment of GeSbTe alloys with germanium has been proposed as a valid approach to increase the crystallization temperature and therefore to address high-temperature applications of non-volatile phase change memories, such as embedded or automotive applications. However, the tendency of Ge-rich GeSbTe alloys to decompose with the segregation of pure Ge still calls for investigations on the basic mechanisms leading to element diffusion and compositional variations. With the purpose of identifying some possible routes to limit the Ge segregation, in this study, we investigate Ge-rich Sb
Identifiants
pubmed: 35214960
pii: nano12040631
doi: 10.3390/nano12040631
pmc: PMC8876497
pii:
doi:
Types de publication
Journal Article
Langues
eng
Subventions
Organisme : European Union
ID : 824957
Organisme : European Union
ID : 823717
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