Lower Limits of Contact Resistance in Phosphorene Nanodevices with Edge Contacts.

NEGF black phosphorus broadening contact resistance edge contact metallization nanoribbon phosphorene quantum transport

Journal

Nanomaterials (Basel, Switzerland)
ISSN: 2079-4991
Titre abrégé: Nanomaterials (Basel)
Pays: Switzerland
ID NLM: 101610216

Informations de publication

Date de publication:
16 Feb 2022
Historique:
received: 26 01 2022
revised: 12 02 2022
accepted: 14 02 2022
entrez: 26 2 2022
pubmed: 27 2 2022
medline: 27 2 2022
Statut: epublish

Résumé

Edge contacts are promising for improving carrier injection and contact resistance in devices based on two-dimensional (2D) materials, among which monolayer black phosphorus (BP), or phosphorene, is especially attractive for device applications. Cutting BP into phosphorene nanoribbons (PNRs) widens the design space for BP devices and enables high-density device integration. However, little is known about contact resistance (

Identifiants

pubmed: 35214987
pii: nano12040656
doi: 10.3390/nano12040656
pmc: PMC8874988
pii:
doi:

Types de publication

Journal Article

Langues

eng

Subventions

Organisme : Croatian Science Foundation
ID : UIP-2019-04-3493

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Auteurs

Mirko Poljak (M)

Computational Nanoelectronics Group, Faculty of Electrical Engineering and Computing, University of Zagreb, HR 10000 Zagreb, Croatia.

Mislav Matić (M)

Computational Nanoelectronics Group, Faculty of Electrical Engineering and Computing, University of Zagreb, HR 10000 Zagreb, Croatia.

Tin Župančić (T)

Computational Nanoelectronics Group, Faculty of Electrical Engineering and Computing, University of Zagreb, HR 10000 Zagreb, Croatia.

Ante Zeljko (A)

Computational Nanoelectronics Group, Faculty of Electrical Engineering and Computing, University of Zagreb, HR 10000 Zagreb, Croatia.

Classifications MeSH