Improved analog switching characteristics of Ta
ITO
Ta2O5
memristor
neuromorphic computing
synapse
Journal
Nanotechnology
ISSN: 1361-6528
Titre abrégé: Nanotechnology
Pays: England
ID NLM: 101241272
Informations de publication
Date de publication:
23 Mar 2022
23 Mar 2022
Historique:
received:
19
11
2021
accepted:
28
02
2022
pubmed:
1
3
2022
medline:
1
3
2022
entrez:
28
2
2022
Statut:
epublish
Résumé
A memristor is defined as a non-volatile memory switching two-terminal resistor, and a memristor with digital switching characteristics is widely studied as a next-generation non-volatile memory because of its simple structure, high integration density, and low power consumption. Recently, analog memristors with gradual resistance switching (RS) characteristics have garnered great attention because of their potential to implement artificial synapses that can emulate the brain functions. Transition metal oxides are thought to be strong candidate materials for the RS. In particular, tantalum oxide (TaO
Identifiants
pubmed: 35226891
doi: 10.1088/1361-6528/ac5928
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Informations de copyright
© 2022 IOP Publishing Ltd.