High Performance Semiconducting Nanosheets
2D PAINT
MoS2
electrochemical intercalation
high resolution STEM
photoelectrodes
quantum yield
solar energy conversion
Journal
ACS nano
ISSN: 1936-086X
Titre abrégé: ACS Nano
Pays: United States
ID NLM: 101313589
Informations de publication
Date de publication:
26 Apr 2022
26 Apr 2022
Historique:
pubmed:
16
3
2022
medline:
16
3
2022
entrez:
15
3
2022
Statut:
ppublish
Résumé
The liquid-phase exfoliation of semiconducting transition metal dichalcogenide (TMD) powders into 2D nanosheets represents a promising route toward the scalable production of ultrathin high-performance optoelectronic devices. However, the harsh conditions required negatively affect the semiconducting properties, leading to poor device performance. Herein we demonstrate a gentle exfoliation method employing standard bulk MoS
Identifiants
pubmed: 35290010
doi: 10.1021/acsnano.1c10739
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM